IRF7831TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7831HEXFET Power MOSFET
IRF7831TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S D Very Low R at 4.5V VDS(on) GS ..
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IRF7831TRPBF. ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S D Very Low R at 4.5V VDS(on) GS ..
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IRF7832PBF , HEXFET Power MOSFET
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IRF7831-IRF7831TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94636B
International
TOR. Rectifier IRF7831
HEXFET*) Power MOSFET
Applications
V R max .
q High Frequency Point-of-Load DSS DS(on) Qg (typ )
Synchronous Buck Converter for 30V 3.6mf2@Vas = 10V 40nC
Applications in Networking &
Computing Systems.
s nrp I a :13 D
Benefits 2 7
s :11 H :1] D
0 Very Low RDS(on) at 4.5V l/ss 3 Ir' 6
o Ultra-Low Gate Impedance s ID LIL] D
0 Fully Characterized Avalanche Voltage G M4 s-UL] D
and Current Top View SO-8
. 100% Tested for He
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage 1 12
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 21
ID @ T, = 70°C Continuous Drain Current, l/ss @ 10V 17 A
IDM Pulsed Drain Current co 170
Pro @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 2O °CNV
Ross Junction-to-Ambient C9 _ 50
Notes co through © are on page 10
1
6/30/05
IRF783'l
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance 2.5 3.1 3.6 mn Ves = 10V, ID = 20A ©
3.0 3.7 4.4 Vss = 4.5V, ID = 16A ©
VGS(th) Gate Threshold Voltage 1.35 - 2.35 V VDS = Vas, ID = 250uA
AVGS(1h) Gate Threshold Voltage Coefficient - - 5.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA VDS = 24V, Vss = 0V
- - 150 VDS = 24V, I/ss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA I/ss = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
gfs Forward Transconductance 97 - - S Vos = 15V, ID = 16A
Qg Total Gate Charge - 40 60
0951 Pre-Vth Gate-to-Source Charge - 12 - I/ns = 15V
0952 Post-Vth Gate-to-Source Charge - 3.1 - nC Ves = 4.5V
di Gate-to-Drain Charge - 11 - ID = 16A
ngd, Gate Charge Overdrive - 14 - See Fig. 16
st Switch Charge (0952 + di) - 14 -
a,, Output Charge - 22 - nC 1hos = 16V, Vss = 0V
Ra Gate Resistance - 1.4 2.5 Q
tum) Turn-On Delay Time - 18 - VDD = 15V, l/ss = 4.5V ©
t, Rise Time - 10 - ID = 16A
tum") Turn-Off Delay Time - 17 - ns Clamped Inductive Load
t, Fall Time - 5.3 -
Ciss Input Capacitance - 6240 - Vss = 0V
COSS Output Capacitance - 980 - pF VDS = 15V
c,, Reverse Transfer Capacitance - 390 - f = 1.0MH2
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © _ 100 mJ
|AR Avalanche Current co - 16 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) A showing the L,-,
G, Pulsed Source Current - - 170 integral reverse (3 (rd,
(Body Diode) co p-n junction diode. cl
Va, Diode Forward Voltage - - 1.2 v T, = 25°C, IS = 16A, VGS = ov ©
1,, Reverse Recovery Time - 42 62 ns T: = 25°C, IF = 16A, Va, = 25V
0,, Reverse Recovery Charge - 31 47 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic tum-on time is negligible (turn-on is dominated by LS+LD)
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