IRF7823TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplicationsA1 8S D2 7S DBenefits3 6S D Very Low R at 4.5V VDS(on) GS4 5G D Low Gate ChargeSO-8 ..
IRF7823TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQgDSS DS(on) High Frequency Point-of-LoadSynchronous Buck Converter for8.7m @V ..
IRF7828 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 94602IRF7828®HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOSFETs ..
IRF7828 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.Q 9.2nCGThe package is designed for vapor phase, infra-red,Q 3.7nCswconvection, or w ..
IRF7831 ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Point-of-Load3.6m@V = 10V30V 40nCGSSynchron ..
IRF7831TR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7831HEXFET Power MOSFET
ISL5827IN ,Dual 12-bit, +3.3V, 260+MSPS, high speed D/A converter. Clock speed 260 MHz.FeaturesD/A Converter• Low Power . . . . . 233mW with 20mA Output at 130MSPSThe ISL5827 is a dual 1 ..
ISL5829/2IN ,Dual 12-bit/ +3.3V/ 130/210MSPS/ CommLink TM High Speed D/A ConverterFeaturesTM CommLink High Speed D/A Converter• Speed Grades . . . . . . . . . . . . . . . . 130M and ..
ISL5829IN ,Dual 12-bit/ +3.3V/ 130/210MSPS/ CommLink TM High Speed D/A ConverterApplicationsISL5829IN -40 to 85 48 Ld LQFP Q48.7x7A 130MHz• Cellular Infrastructure - Single or Mul ..
ISL5861/2IA ,12-bit/ +3.3V/ 130/210MSPS/ CommLinkTM High Speed D/A ConverterFeaturesHigh Speed D/A Converter• Speed Grades . . . . . . . . . . . . . . . . 130M and 210+MSPSThe ..
ISL58831 ,Dual Laser Driver with APC Amplifier and Spread Spectrum OscillatorApplicationsPinout• Combo CD-R + DVD-RISL58831• DVD±RW to 8X(24 LD QFN)TOP VIEW• Writable optical d ..
ISL59112IEZ-T7 , 40MHz Rail-to-Rail Video Buffer
IRF7823TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 97050
International
TOR Rectifier IRF7823PbF
HEXFET® Power MOSFET
Applications
q High Frequency Point-of-Load Voss RDS(on) max titg
Synchronous Buck Converter for 30V 8_7mQ@VGs = 10V 9.1nC
Applications in Networking &
Computing Systems
q Optimized for Control FET applications
s nrp I a :13 D
s :112 H 7:1] D
Benefits 3 E 6
a Very Low RDS(on) at 4.5V VGS s ID LIL] D
. Low Gate Charge G J“ s-UL] D
0 Fully Characterized Avalanche Voltage Top View SO-8
and Current
. 100% Tested for Rs
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ T, = 25°C Continuous Drain Current, Vss @ 10V 13
ID @ T, = 70°C Continuous Drain Current, l/ss @ 10V 11 A
G, Pulsed Drain Current co 100
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rom. Junction-to-Dram Lead © - 20 °C/W
ROJA Junction-to-Amblent TS - 50
Notes co through co are on page 10
1
10/06/05
|RF7823PbF
International
TOR Rectifier
Static @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.024 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance -- 6.9 8.7 m9 Vss = 10V, ID = 13A ©
-- 9.3 11.9 Vss = 4.5V, ID = 10A ©
VGS(th) Gate Threshold Voltage 1.35 1.8 2.35 V Vos = Vss, ID = 25pA
AVGth) Gate Threshold Voltage Coefficient - -5.1 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 150 Vos = 24V, Vas = OV, TJ = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vas = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gfs Forward Transconductance 27 - - S Vos = 15V, ID = 10A
Qg Total Gate Charge - 9.1 14
0931 Pre-Wh Gate-to-Source Charge - 2.7 - VDS = 15V
0952 Post-l/th Gate-to-Source Charge - 0.84 - nC Vss = 4.5V
di Gate-to-Drain Charge __- 3.2 -- ID = 10A
ngdr Gate Charge Overdrive - 2.4 - See Fig. 17 & 18
st Switch Charge (Q952 + di) - 4.0 -
Qoss Output Charge - 5.8 - nC Vos = 16V, l/ss = OV
Rg Gate Resistance - 2.0 3.0 Q
ta(on) Turn-On Delay Time - 7.2 - VDD = 16V, Ves = 4.5V
t, Rise Time - 8.2 - ID = 10A
tdom Turn-Off Delay Time - IO - ns Clamped Inductive Load
t, Fall Time - 2.7 - See Fig. 15
Ciss Input Capacitance - 1110 - Vss = 0V
Cass Output Capacitance - 240 - pF l/rs = 15V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 230 mJ
|AR Avalanche Current co - 10 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 100 integral reverse G
(Body Diode) C) p-n junction diode. S
Van Diode Forward Voltage - - 1.0 V TJ = 25°C, ls = 10A, VGS = 0V ©
trr Reverse Recovery Time - 7.8 12 ns Tu = 25°C, IF = 10A, VDD = 15V
a,, Reverse Recovery Charge - 9.0 14 nC di/dt = 500A/ps © See Fig. 16
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
2
