30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7822TRPBF is a Power MOSFET manufactured by Infineon Technologies. Below are the factual specifications, descriptions, and features from Ic-phoenix technical data files:
### **Specifications:**
- **Manufacturer:** Infineon Technologies
- **Part Number:** IRF7822TRPBF
- **Type:** N-Channel Power MOSFET
- **Technology:** HEXFET®
- **Drain-Source Voltage (VDSS):** 30V
- **Continuous Drain Current (ID):** 84A (at 25°C)
- **Pulsed Drain Current (IDM):** 330A
- **RDS(on) (Max):** 1.8mΩ (at VGS = 10V)
- **Gate-Source Voltage (VGS):** ±20V
- **Power Dissipation (PD):** 200W (at 25°C)
- **Operating Junction Temperature (TJ):** -55°C to +175°C
- **Package:** PQFN 5x6mm
### **Descriptions:**
- The IRF7822TRPBF is a high-performance N-Channel MOSFET designed for power management applications.
- It features low on-state resistance (RDS(on)) for reduced conduction losses.
- Suitable for high-efficiency switching applications in DC-DC converters, motor control, and power supplies.
### **Features:**
- **Low RDS(on):** Enhances efficiency in power conversion.
- **High Current Handling:** Supports up to 84A continuous drain current.
- **Fast Switching:** Optimized for high-speed switching applications.
- **Thermal Performance:** PQFN package improves thermal dissipation.
- **Avalanche Rated:** Robust design for reliable operation under transient conditions.
This information is based solely on the manufacturer's datasheet and product documentation.
