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IRF7822TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International PD-95024
TOR Rectifier IRF7822PbF
HEXFET0 Power MOSFET for DC-DC Converters
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
q Low Conduction Losses
q Low Switching Losses s ET . 531] D
q Lead-Free 2 7
s DI H 3]: D
s D13 CH 6:3: D
Description 4 5
This new device employs advanced HEXFET Power G LIE 313 C)
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced SO-8 Top View
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors. DEVICE CHARACTERlSTlCSS
The IRF7822 has been optimized for all parameters that IRF7822
are critical in synchronous buck converters including
RDSM, gate charge and Cdv/dt-induced turn-on immunity. Rosmn, 5.0mQ
The IRF7822 offers particulary low Row”) and high Cdv/ Q 44nC
dt immunity for synchronous FET applications. G
st 12nC
The package is designed for vapor phase, infra-red, Q 27nC
convection, or wave soldering techniques. Power oss
dissipation of greater than 3W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRF7822 Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage l/ss :12
Continuous Drain or Source T, = 25°C ID 18
Current (VGS 2 4.5V) T, = 70°C 13 A
Pulsed Drain CurrentC) L, 150
Power Dissipation T, = 25°C PD 3.1 W
T, = 70°C 3.0
Junction & Storage Temperature Range T J,Tsm -55 to 150 °C
Continuous Source Current (Body Diode) ls 3.8 A
Pulsed Source Currenk0 L, 150
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-AmbientG) WA 40 "C/W
Maximum Junction-to-Lead M 20 °C/W
1
9/30/04
IRF7822PbF International
TOR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 - - V l/ss = 0V, ID = 250pA
Breakdown Voltage
Static Drain-Source RDSW‘) 5.0 6.5 m9 Vss = 4.5V, ID = 15A©
on Resistance
Gate Threshold Voltage VGSW 1.0 V VDS = VGSJD = 250pA
Drain-Source Leakage loss 30 Vos = 24V, Vas = 0
Current 150 HA Vos = 24V, Vas = o,
T] = 100°C
Gate-Source Leakage lass t100 nA Vas = t12V
Current
Total Gate Chg Cont FET q, 44 60 I/ss-HHN, lr-15A, VDS=16V
Total Gate Chg Sync FET q, 38 Vas = 5.0V, VDS< 100mV
Pre-Vth 0651 13 VDS = 16V, ID = 15A
Gate-Source Charge
Post-N/th QG82 3.0 nC
Gate-Source Charge
Gate to Drain Charge Qa, 9.0
Switch Chg(Qgsz + di) st 12
Output Charge Qoss 27 VDS = 16V, Vas = 0
Gate Resistance RG 1.5 Q
Turn-on Delay Time tum") 15 Va, = 16V, ID = 15A
Rise Time t, 5.5 ns Vas = 5.0V
Turn-off Delay Time t d (om 22 Clamped Inductive Load
Fall Time t, 12
Input Capacitance Ciss - 5500 -
Output Capacitance Coss - 1000 - pF Vos = 16V, Vas = 0
Reverse TransferCapacitance Crss - 300 -
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Va, 1.0 V Is = 15AC0, Vas = 0V
Voltage'
Reverse Recovery On 120 nC di/dt - 700A/ps
Charge) Vos = 16V, Vas = OV, Is = 15A
Reverse Recovery QMSJ 108 nC di/dt = 700A/ps
Charge (with Parallel (with 1080040)
Schottky) VDS = 16V, Vas = 0V, IS = 15A
Notes: co Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width E 400 ps; duty cycle s 2%.
(D When mounted on 1 inch square copper board
(E) Typ = measured - 0055
(9 Typical values of RDs(on) measured at Vss = 4.5V, A, st and Qoss
measured at Vss = 5.0V, IF = 15A.
2
