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IRF7822-IRF7822TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
PD - 94279
IRF7822
HEXFET6 Power MOSFET for DC-DC Converters
. Low Conduction Losses
. Low Switching Losses . a 33 D
Description 6:3: D
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented 5311 D
balance of on-resistance and gate charge.The reduced
conduction and switching losses make it ideal for high SO-8 Top View
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7822 has been optimized for all parameters that DEVICE CHARACTERlSTlCSS
are critical in synchronous buck converters including IRF7822
R0303"), gate charge and Cdv/dt-induCed turn-on immunity.
The IRF7822 offers particulary low Roson) and high Cdv/ RDSW 5.0mn
dt immunity for synchronous FET applications.
Qs 44nC
The package is designed for vapor phase, infra-red, QSW 12nC
convection, or wave soldering techniques. Power Q 27 C
dissipation of greater than 3W is possible in a typical oss n
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRF7822 Units
Drain-Source Voltage VDs 30 V
Gate-Source Voltage VGs t12
Continuous Drain or Source T, = 25°C r, 18
Current (Va, 2 4.5V) TA = 70°C 13 A
Pulsed Drain CurrentC) L, 150
Power Dissipation T, = 25°C PD 3.1 W
T, = 70°C 3.0
Junction & Storage Temperature Range T J,TSTG -55 to 150 ''C
Continuous Source Current (Body Diode) ls 3.8 A
Pulsed Source Current0D Iss, 150
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient® WA 40 °CNV
Maximum Junction-to-Lead M 20 °C/W
1
07/11/01
IRF7822 International
TOR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 - - V I/ss = 0V, r, = 250pA
Breakdown Voltage
Static Drain-Source Roam) 5.0 6.5 m9 VGS = 4.5V, ID = 15A©
on Resistance
Gate Threshold Voltage VGSW 1.0 V VDs = VGSJD = 250pA
Drain-Source Leakage |DSS 30 VDS = 24V, VGS = 0
Current 150 pA Vos = 24V, N/ss = o,
T] = 100°C
Gate-Source Leakage (sss i100 nA VGS = i12V
Current
Total Gate Chg Cont FET Qs 44 60 VGS=5.0V, ID=15A, VDS=16V
Total Gate Chg Sync FET A, 38 VGS = 5.0V, VDS< 100mV
Pre-l/th Ass, 13 VDS = 16V, '0 = 15A
Gate-Source Charge
Post-Vth QGSZ 3.0 nC
Gate-Source Charge
Gate to Drain Charge Qa, 9.0
Switch Chg(Q952 + di) st 12
Output Charge Qoss 27 V05 = 16V, VGS = 0
Gate Resistance Rs 1.5 n
Turn-on Delay Time l (On) 15 VDD = 16V, ID = 15A
Rise Time t, 5.5 ns VGS = 5.0V
Turn-off Delay Time t, (oh) 22 Clamped Inductive Load
Fall Time t, 12
Input Capacitance Ciss - 5500 -
Output Capacitance Coss - 1000 - pF Vos = 16V, VGS = 0
Reverse Transfer Capacitance Crss - 300 -
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward VSD 1.0 V IS = 15A0), VGS = 0V
Voltage'
Reverse Recovery Qrr 120 no di/dt _ 700A/ps
Char e© - - -
g Vr,s=16MVGs=0V, ls=15A
Reverse Recovery On“) 108 nC di/dt = 700A/ps
Charge (with Parallel (with 10BQ040)
Schottky)© VDS = 16V, VGS = 0V, Is = 15A
Notes: C) Repetitive rating; pulse width limited by max.junction temperature.
© Pulse width s 400 ps; duty cycle S 2%.
© When mounted on 1 inch square copper board
© Typ = measured - QM
© Typical values of RDs(on) measured atVGS = 4.5V, Q6, st and Qoss
measured at Vss = 5.0V, l, = 15A,
2
