IRF7821TRPBF. ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications in Networking &Computing Systems. Lead-FreeAA18S DBenefits2 7S D Very Low R at 4.5V ..
IRF7821UPBF ,30V Single N-Channel HEXFET Power MOSFET in a Lead Free SO-8 package designed and qualified for the consumer marketApplications in Networking &Computing Systems. Lead-FreeAA18S DBenefits2 7S D Very Low R at 4.5V ..
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IRF7821TRPBF-IRF7821TRPBF.
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD - 95213A
IRF7821PbF
HEXFET© Power MOSFET
Applications
q High Frequency Point-of-Load VDSS RDS(on) max %(typ0
Synchronous Buck Converter for 30V 9.Imn@Vss= 10V 9.3nC
Applications in Networking &
Computing Systems.
a Lead-Free
s EED‘ B D
Benefits 2 7
S CU] B CD] D
q Very Low RDS(on) at 4.5V l/ss 3 m i 6
o Low Gate Charge s m m D
o Fully Characterized Avalanche Voltage G 3'34 5m D
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ T, = 25°C Continuous Drain Current, Vas @ 10V 13.6
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 11 A
|DM Pulsed Drain Current (D 100
PD @TA = 25°C Power Dissipation (4) 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 WPC
TJ Operating Junction and -55 to + 155 ''C
TSTS Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead © _ 20 °C/W
RNA Junction-to-Ambient OS _ 50
Notes co through co are on page 10
05/23/07
IRF78fy1PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.025 - VPC Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.0 9.1 mn VGS = 10V, ID = 13A ©
- 9.5 12.5 VGS = 4.5V, ID =1OA ©
Vesuh) Gate Threshold Voltage 1.0 - - V Vos = Vss, ID = 250pA
AVesah) Gate Threshold Voltage Coefficient -- - 4.9 -- mV/°C
loss Drain-to-Source Leakage Current -- - 1.0 pA Vos = 24V, Vss = 0V
-- -- 150 Vos = 24V, Vss = 0V, T, = 125°C
less Gate-to-Source Forward Leakage --- --- 100 nA Vss = 20V
Gate-to-Source Reverse Leakage - - -100 Vss = -20V
gfs Forward Transconductance 22 - - S Vos = 15V, ID = 10A
as, Total Gate Charge - 9.3 14
0951 Pre-Vth Gate-to-Source Charge - 2.5 - Vos = 15V
0952 Post-Wh Gate-to-Source Charge - 0.8 - nC VGS = 4.5V
di Gate-to-Drain Charge - 2.9 - ID = 10A
ngdr Gate Charge Overdrive - 3.1 - See Fig. 16
st Switch Charge (0952 + di) - 3.7 -
Qoss Output Charge __- 6.1 -.-_ nC Vos = 10v, Vss = OV
tum) Turn-On Delay Time -- 6.3 -- VDD = 15V, Vss = 4.5V oo
t, Rise Time --.- 2.7 - ID = 10A
fawn) Turn-Off Delay Time - 9.7 - ns Clamped Inductive Load
t, Fall Time - 7.3 -
Ciss Input Capacitance - 1010 - Vas = 0V
Coss Output Capacitance - 360 - pF I/os = 15V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ©© _ 44 mJ
|AR Avalanche Current 0) - 10 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the fir
ISM Pulsed Source Current - - 100 integral reverse G E
(Body Diode) (0@ p-n junction diode. V e
Vso Diode Forward Voltage -- -- 1.0 V TJ = 25°C, ls = 10A, Vas = 0V ©
tn Reverse Recovery Time -- 28 42 ns T J = 25°C, IF = 10A, VDD = 20V
l Reverse Recovery Charge - 23 35 n0 di/dt = 100A/ps ©
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