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IRF7821-IRF7821TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94579C
International
TOR Rectifier llRF7821
HEXFET© Power MOSFET
Applications
. . V R max 0 t .
q High Frequency Point-of-Load DSS DS(on) s/ yp )
Synchronous Buck Converter for 30V 9.Imn@Vss= 10V 9.3nC
Applications in Networking &
Computing Systems.
. s EED‘ B D
Benefits 2 7
s ECU B CD] D
q Very Low RDS(on) at 4.5V l/ss 3 m i
o Low Gate Charge s m m D
o Fully Characterized Avalanche Voltage G 3'34 5m D
and Current Top View SO-8
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 20
ID @ T, = 25°C Continuous Drain Current, Vas @ 10V 13.6
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 11 A
|DM Pulsed Drain Current (D 100
PD @TA = 25°C Power Dissipation (4) 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 WPC
TJ Operating Junction and -55 to + 155 ''C
TSTS Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead © _ 20 °C/W
RNA Junction-to-Ambient OS _ 50
Notes co through co are on page 10
1
05/23/07
|RF7821
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, lo = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 7.0 9.1 mg Vss = 10V, ID = 13A ©
- 9.5 12.5 VGS=4.5V, ID: 10A ©
VGS(th) Gate Threshold Voltage 1.0 - V Vos = Vas, b = 250pA
AVGS(lh) Gate Threshold Voltage Coefficient - - 4.9 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 150 Vos = 24V, Vss = OV, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage -- -- -100 Vss = -20V
gfs Forward Transconductance 22 --- --.- S Vrss = 15V, ID = 10A
09 Total Gate Charge - 9.3 14
0951 Pre-Vth Gate-to-Source Charge - 2.5 - Vos = 15V
Ass Post-Vth Gate-to-Source Charge - 0.8 - nC Ves = 4.5V
di Gate-to-Drain Charge - 2.9 - ID = 10A
ngdr Gate Charge Overdrive - 3.1 - See Fig. 16
st Switch Charge (0952 + di) - 3.7 -
Qoss Output Charge - 6.1 - nC Vos = 10V, Vas = 0V
td(on) Turn-On Delay Time - 6.3 - VDD = 15V, VGS = 4.5V ©
t, Rise Time - 2.7 - ID = 10A
td(off) Turn-Off Delay Time - 9.7 - ns Clamped Inductive Load
t, Fall Time - 7.3 -
Ciss Input Capacitance -- 1010 -- I/ss = 0V
Coss Output Capacitance - 360 --.- pF Vos = 15V
Crss Reverse Transfer Capacitance - 110 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy ©© - 44 mJ
|AR Avalanche Current 0) _ 10 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the Cr,
ISM Pulsed Source Current - - 100 integral reverse G E
(Body Diode) O© p-n junction diode. c
Vso Diode Forward Voltage - - 1.0 V To = 25°C, Is = 10A, Vas = 0V ©
tn Reverse Recovery Time - 28 42 ns T J = 25°C, IF = 10A, VDD = 20V
er Reverse Recovery Charge - 23 35 no di/dt = 1OOA/ps ©
2
