IRF7815TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for Notebook43m @V = 10V150V
IRF7815TRPBF
150V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 96284
International
TOR. Rectifier IRF7815PbF
HEXFET© Power MOSFET
Applications
V R max .
o Synchronous MOSFET for Notebook DSS DS(on) Qg (typ )
Processor Power 150V 43mQ@VGs = 10V 25nC
o Synchronous Rectifier MOSFET for
Isolated DC-DC Converters in
Networking Systems
. s EED‘ ' B D
Benefits 2 7
s C111 H CH] D
0 Very Low RDS(on) at 10V VGS l r
s m3 f 6m] D
q Low Gate Charge
o Fully Characterized Avalanche Voltage G 3'34 5m D
and Current Top View SO-8
0 20V Vss Max. Gate Rating
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 150 V
VGS Gate-to-Source Voltage * 20
ID @ TA = 25°C Continuous Drain Current, l/ss @ 10V 5.1
ID @ T, = 70°C Continuous Drain Current, Ves @ 10V 4.1 A
IDM Pulsed Drain Current OD 41
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead co - 20
RNA Junction-to-Ambient © _ 50 C/IN
Notes OD through (S) are on page 9
1
12/01/09
|RF7815PbF
International
TOR Rectifier
Static © To = 25''C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 150 - - V l/ss = 0V, lo = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.17 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 34 43 mg l/ss = 10V, b = 3.1A ©
VGS(th) Gate Threshold Voltage 3.0 4.0 5.0 V
. . Vos = Vas, ID =100PA
AVGSuh) Gate Threshold Voltage Coefficient - -12.2 - mV/°C
loss Drain-to-Source Leakage Current - - 2O Vos = 150V, Vas = 0V
- - 250 pA Vos = 150v, Vas = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 Vas = 20V
Gate-to-Source Reverse Leakage - - -100 nA Vss = -20V
gfs Forward Transconductance 8.2 - - S Vos = 50V, ID = 3.1A
09 Total Gate Charge -- 25 38
Qgs1 Pre-Vth Gate-to-Source Charge -- 6.5 -- Vos = 75V
Qgsz Post-i/th Gate-to-Source Charge - 1.3 --.- l/ss = 10V
As Gate-to-Source Charge - 7.8 - nC lo = 3.1A
di Gate-to-Drain Charge - 7.4 - See Figs. 6, 16a & 16b
ngdv Gate Charge Overdrive - 9.8 -
st Switch Charge (ths + 09d) - 8..7 -
Qoss Output Charge - 1O - nC Vos = 16V, Vss = 0V
Re Gate Resistance - 1.02 - Q
tum) Turn-On Delay Time - 8.4 - VDD = 75V, Vss = 10V ©
tr Rise Time - 3.2 - ID = 3.1A
td(off) Turn-Off Delay Time - 14 - ns Rs = 1.89
t, Fall Time -- 8.3 -- See Figs. 15a & 15b
Ciss Input Capacitance -- 1647 -- Vss = 0V
Coss Output Capacitance - 129 - pF Vos = 75V
Crss Reverse Transfer Capacitance - 30 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 529 mJ
|AR Avalanche Current LO - 3.1 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
. - - 2.3 . F
(Body Diode) A showing the 2
ISM Pulsed Source Current _ _ 41 integral reverse G T,
(Body Diode) CD p-n junction diode. e
Vso Diode Forward Voltage - - 1.3 V Tu = 25°C, Is = 3.1A, VGS = 0V ©
trr Reverse Recovery Time - 41 62 ns Tu = 25°C, IF = 3.1 A, VDD = 75V
l Reverse Recovery Charge -- 213 320 nC di/dt = 300A/ps ©
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