IRF7811WTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD- 95023CIRF7811WPbF®HEXFET Power MOSFET for DC-DC Converters N-Channel Application-Specific MOS ..
IRF7815TRPBF ,150V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) Synchronous MOSFET for Notebook43m @V = 10V150V
IRF7811WPBF-IRF7811WTRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
PD- 95023C
IRF7811WPbF
HEXFET0 Power MOSFET for DC-DC Converters
q Low Conduction Losses
q Low Switching Losses s mt . 531] D
q 100% Tested for Rg 2 7
s DI H 3]: D
q Lead-Free m
s 13:3 6:3: D
Description G E114 5313 C)
This new device employs advanced HEXFET Power .
MOSFET technology to achieve an unprecedented SO-8 Top View
balance of on-resistance and gate charge. The reduced
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest DEVICE CHARACTERlSTlCSS
generation of microprocessors.
IRF7811WPbF
The IRF7811WPbF has been optimized for all parameters
that are critical in synchronous buck converters including RDS(on) 9.0mQ
RDSM, gate charge and Cdv/dt-induced turn-on immunity. Q 22nC
The IRF7811WPbF offers particulary low RDSM and high G
Cdv/dt immunity for synchronous FET applications. st 10.1nC
q,, 12nC
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power
dissipation of greater than 3W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRF7811WPbF Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage l/ss :12
Continuous Drain or Source T, = 25°C ID 14
Current (VGS 2 4.5V) TL = 90°C 13 A
Pulsed Drain CurrentC) L, 109
Power Dissipation T, = 25°C PD 3.1 W
TL = 90°C 3.0
Junction & Storage Temperature Range T J,Tsm -55 to 150 °C
Continuous Source Current (Body Diode) ls 3.8 A
Pulsed Source Currenk0 L, 109
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient® WA 40 "C/W
Maximum Junction-to-Lead M 20 °C/W
www.Irt.com 1
01/06/09
IRF7811WPbF
International
TOR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDss 30 - - V l/ss = 0V, ID = 250pA
Breakdown Voltage
Static Drain-Source RDSW‘) 9.0 12 m9 Vss = 4.5V, ID = 15A©
on Resistance
Gate Threshold Voltage VGSW 1.0 V VDS = VGSJD = 250pA
Drain-Source Leakage loss 30 Vos = 24V, Vas = 0
Current 150 HA Vos = 24V, Vas = o,
T] = 100°C
Gate-Source Leakage lass t100 nA Vas = t12V
Current
Total Gate Chg Cont FET q, 22 33 I/ss-HHN, lr-15A, VDS=16V
Total Gate Chg Sync FET q, 16.3 Vas = 5V, VDS< 100mV
Pre-Vth Qss, 3.5 VDS = 16V, ID =15A,VGs = 5.0V
Gate-Source Charge
Post-Vth C/ss, 1 .2 nC
Gate-Source Charge
Gate to Drain Charge Qa, 8.8
Switch Chg(Qgsz + di) st 10.1
Output Charge Ass 12 VDS = 16V, Vas = 0
Gate Resistance RG 2.0 4.0 Q
Turn-on Delay Time tom) 11 Va, = 16V, ID = 15A
Rise Time t, 11 ns Vas = 5.0V
Turn-off Delay Time t d (on) 29 Clamped Inductive Load
Fall Time t; 9.9
Input Capacitance CISS - 2335 -
Output Capacitance Coss - 400 - p F Vos = 16V, Vas = 0
Reverse Transfer Capacitance Crss - 119 -
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Va, 1.25 V Is = 15AC0, Vas = 0V
Voltage'
Reverse Recovery On 45 nC di/dt - 700A/ps
Charge) Vos = 16V, Vas = OV, Is = 15A
Reverse Recovery QMSJ 41 nC di/dt = 700A/ps
Charge (with Parallel (with 1080040)
Schottky) VDS = 16V, Vas = 0V, IS = 15A
Notes: co Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width E 400 us; duty cycle s 2%.
(3) When mounted on 1 inch square copper board
CI) Typ = measured - Qoss
s Typical values of RDS(on) measured at Vas = 4.5V, A, st and QOSS
measured at Vas = 5.0V, IF = 15A.
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