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IRF7811W-IRF7811WTR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International PD-94031D
TOR Rectifier IRF781 1W
HEXFET0 Power MOSFET for DC-DC Converters
N-Channel Application-Specific MOSFETs
Ideal for CPU Core DC-DC Converters
q Low Conduction Losses
q Low Switching Losses s ET . 531] D
q 100% Tested for Rs 2 7
s DI H 3]: D
s 13:3 CH 6:3: D
Description 4 5
This new device employs advanced HEXFET Power G LIE 313 C)
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced SO-8 Top View
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors. DEVICE CHARACTERlSTlCSS
The IRF7811W has been optimized for all parameters IRF7811W
that are critical in synchronous buck converters including
RDSM, gate charge and Cdv/dt-induced turn-on immunity. Roam, 9.0mQ
The IRF7811W offers particulary low Roman) and high Cdv/ Q 22nC
dt immunity for synchronous FET applications. G
st 10.1 nC
The package is designed for vapor phase, infra-red, Q 12nC
convection, or wave soldering techniques. Power oss
dissipation of greater than 3W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRF7811W Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage l/ss :12
Continuous Drain or Source T, = 25°C ID 14
Current (VGS 2 4.5V) TL = 90°C 13 A
Pulsed Drain CurrentC) L, 109
Power Dissipation T, = 25°C PD 3.1 W
TL = 90°C 3.0
Junction & Storage Temperature Range T J,Tsm -55 to 150 °C
Continuous Source Current (Body Diode) ls 3.8 A
Pulsed Source Currenk0 L, 109
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-AmbientG) WA 40 "C/W
Maximum Junction-to-Lead M 20 °C/W
1
01/06/09
IRF781 1W International
TOR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDss 30 - - V l/ss = 0V, ID = 250pA
Breakdown Voltage
Static Drain-Source RDSW‘) 9.0 12 m9 Vss = 4.5V, ID = 15A©
on Resistance
Gate Threshold Voltage VGSW 1.0 V VDS = VGSJD = 250pA
Drain-Source Leakage loss 30 Vos = 24V, Vas = 0
Current 150 pA vDS = 24V, Vas = O,
Tl = 100°C
Gate-Source Leakage lass 1100 nA Vas = t12)/
Current
Total Gate Chg Cont FET q, 22 33 VGS=5.OV, lr-ISA, VDS=16V
Total Gate Chg Sync FET q, 16.3 Vas = 5V, vw: 100mV
Pre-Vth Q,351 3.5 Vos = 16V, ID = 15A, Vas = 5.0V
Gate-Source Charge
Post-Vth aas, 1 .2 nC
Gate-Source Charge
Gate to Drain Charge %, 8.8
Switch Chg(tU, + 09d) st 10.1
Output Charge Qos,, 12 Vos = 16V, Vas = 0
Gate Resistance Rs 2.0 4.0 Q
Turn-on Delay Time tam") 11 VDD = 16V, ID = 15A
Rise Time t, 11 ns Vas = 5.0V
Turn-off Delay Time t, (off) 29 Clamped Inductive Load
Fall Time t, 9.9
Input Capacitance Ciss - 2335 -
Output Capacitance cu, - 400 - pF Vos = 16V, Vas = 0
Reverse Transfer Capacitance Crss - 1 19 -
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Va, 1.25 V Is = 15AC0, Vas = 0V
Voltage'
Reverse Recovery On 45 nC di/dt - 700A/ps
Charge) Vos = 16V, Vas = OV, Is = 15A
Reverse Recovery QMSJ 41 nC di/dt = 700A/ps
Charge (with Parallel (with 1080040)
Schottky) VDS = 16V, Vas = 0V, IS = 15A
Notes: co Repetitive rating; pulse width limited by max. junction temperature.
Q) Pulse width f 400 us; duty cycle S 2%.
© When mounted on 1 inch square copper board
© Typ = measured - Qass
G) Typical values of RDs(on) measured at Vas = 4.5V, A, st and Qoss
measured at VGS = 5.0V, IF = 15A.
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