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IRF7811AV-IRF7811AVTR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International PD-94009B
TOR Rectifier IRF7811AV
. N-Channel Application-Specific MOSFETs
. Ideal for CPU Core DC-DC Converters
. Low Conduction Losses
. Low Switching Losses
. Minimizes Parallel MOSFETs for high current J D
applications 7
. 100% RG Tested m D
SEED D
Description 5
This new device employs advanced HEXFET Power Em D
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced SO-8 Top View
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
The IRF7811AV has been optimized for all parameters DEVICE CHARACTERlSTlCSS
that are critical in synchronous buck converters including
RDS
The |hF7811AV offers an extremely low combination of RDSon) 1 1 m9
st & R080”) for redufed.. losses In both control and QG 17 nC
synchronous FET applications.
st 6.7 nC
The package is designed for vapor phase, infra-red,
convection, or wave soldering techniques. Power Qoss 8.1 nC
dissipation of greater than 2W is possible in a typical
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRF7811AV Units
Drain-to-Source Voltage VDS 30 V
Gate-to-Source Voltage VGS K20
Continuous Output Current TA = 25°C I 10.8 A
(V65 2 4.5V) TL = 90°C D 11.8
Pulsed Drain Current C) IDM 100
T = 25°C
Power Dissipation © A PD 2.5 W
TL = 90°C 3.0
Junction & Storage Temperature Range T J , TSTG -55 to 150 ''C
Continuous Source Current (Body Diode) ls 2.5
Pulsed Source Current OD ISM 50 A
Thermal Resistance
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient ©© ReJA - 50 "C/W
Maximum Junction-to-Lead © fur, - 20
1
1 1/01/05
IRF78r1AV International
TOR 'kyctifier
Electrical Characteristics
Parameter Symbol Min Typ Max Units Conditions
Drain-to-Source Breakdown Voltage V(BR)DSS 30 - - V Vos = 0V, ID = 250PA
Static Drain-to-Source On-Resistance RDSW) - 11 14 m9 VGS = 4.5V, ID = 15A C)
Gate Threshold Voltage Vsath) 1.0 - 3.0 V Vos = l/ss, b = 250PA
- - 50 PA Vos = 30V, Vss = 0V
Drain-to-Source Leakage Current |DSS - - 20 PA Vos = 24V, N/ss = 0V
- - 100 PA Vos = 24V, N/ss = 0V, TJ = 100°C
Gate-to-Source Leakage Current less - - i100 nA Vss = * 20V
Total Gate Charge, Control FET Qg - 17 26 nC Vos = 24V, ID = 15A, VGS = 5.0V
Total Gate Charge, Synch FET Qg - 14 21 I/ss = 5.0V, Vos < 100mV
Pre-Vth Gate-to-Source Charge 0951 - 3.4 -
Post-Vth fa.tt.ttf.ou..rft Charge Qgs2 - 1.6 - Vos = 16V, '0 = 15A
Gate-to-Drain ("Miller") Charge di - 5.1 -
Switch Charge (0952 + di) Qsw - 6.7 -
Output Charge Qoss - 8.1 12 Vos = 16V, N/ss = 0
Gate Resistance Rs 0.5 - 4.4 Q
Turn-On Delay Time tdwn) - 8.6 - ns VDD = 16V
Rise Time t, - 21 - ID = 15A
Turn-Off Delay Time tum) - 43 - VGS = 5.0V
Fall Time t, - 10 - Clamped Inductive Load
Input Capacitance Ciss - 1801 - PF Ves = 0V
Output Capacitance COSS - 723 - Vos = 10V
Reverse Transfer Capacitance Crss - 46 -
Diode Characteristics
Parameter Symbol Min Typ Max Units Conditions
Diode Forward Voltage VSD - - 1.3 V TJ = 25°C, ls = 15A © NGS = 0V
di/dt = 700A/
Reverse Recovery Charge GD Qrr - 50 - nC I us
Vor, =16V, Vss = 0V, ID =15A
Reverse Recovery Charge di/dt = 700A/ps , (with 1OBQ040)
(with Parallel Schottsky) © VDD = 16V, Ves = ov, ID = 15A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 3 400 ps; duty cycle S 2%.
When mounted on 1 inch square copper board, t < 10 sec.
Typ = measured - Qoss
Typical values of Ros(on) measured at VGS = 4.5V, 05, st and QOSS measured at VGS =5.0V, l, = 15A.
Re is measured at Tu approximately 90''C
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