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IRF7811ATRPBF
28V Single N-Channel HEXFET Power MOSFET in a SO-8 package
. PD-95264B
International
Tart Rectifier lF1F781 1APbF
Applications HEXFET® Power MOSFET
o High Frequency Synchronous Buck
Converters for Computer Processor Power Voss RDS(on) max 09
0 High Frequency Isolated DC-DC 28V 12mg 17nC
Converters with Synchronous Rectification
forTelecom and Industrial Use
0 100% R, Tested
q Lead-Free
s EED‘ ' a 1]] D
s D112 H 733: D
Benefits s D113 CL 6331 D
. Very Low RDS(on) at 4.5V l/ss G m4 53:: D
o Ultra-Low Ga/e.lmeefian.ce Top View SO-8
q Fully Characterized Avalanche Voltage
and Current
Absolute Maximum Ratings
Symbol Parameter Max Units
ID © TA = 25°C Continuous Drain Current, Vss @ 10V 11 (D
ID @ T, = 70°C Continuous Drain Current, l/ss @ 10V 9.1 (D A
IDM Pulsed Drain Current (D 91
PD @TA = 25°C Power Dissipation (5) 2.5
PD @TA = 70°C Power Dissipation (D 1.6 W
Linear Derating Factor 0.02 W/°C
Vas Gate-to-Source Voltage :12 V
TJ Operating Junction and 55 t 150
TSTG Storage Temperature Range 0 "C
Smoldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Symbol Parameter Typ Max Units
Roan. Junction-to-Drain Lead (9 _ 20 o
ROJA Junction-to-Ambient C9S _ 50 C/W
Notes C) through s are on page 10
1
01/09/08
International
IRF7811APbF
TOR Rectifier
Static © TJ = 25°C (unless otherwise specified)
Symbol Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 28 - - V Vss = 0V, b = 250pA
ABVDss/ATJ Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 8.7 10 mf2 I/ss = lov, lo = 11A ©
- IO 12 I/ss = 4.5V, ID = 9.0A ©
VGS(th) Gate Threshold Voltage 1.0 - 3.0 V V - V I - 250 A
AVesuh) Gate Threshold Voltage Coefficient - -4.0 - mV/°C DS _ GS, D - p
bss Drain-to-Source Leakage Current _- _- 11520 pA x: . ix x: . g, T, = 100°C
less Gate-to-Source Forward Leakage - - 100 nA VGS = 12V
Gate-to-Source Reverse Leakage - - -100 l/ss = -12V
git Forward Transconductance 28 - - S Vrys = 15V, ID = 9.0A
Qg Total Gate Charge --- 17 26
Qgs1 Pre-Vth Gate-Source Charge __- 3.3 __- Vos = 15V
0952 Post-Vth Gate-Source Charge --.- 1.3 --.- Vas = 4.5V
di Gate-to-Drain Charge -- 4.7 --.- nC ID = 9.0A
ngdr Gate Charge Overdrive - 7.2 -- See Fig. 16
st Switch Charge (Qgsz + di) - 6.0 -
Qoss Output Charge - 24 - nC Vos = 16V, Vss = OV
Re Gate Resistance 0.9 - 3.7 Q
ton) Turn-On Delay Time - 7.5 - Va, = 15V, I/ss = 4.5V (9
tr Rise Time - 4.1 - ID = 9.0A
tum) Turn-Off Delay Time - 19 - ns Clamped Inductive Load
tf Fall Time - 6.5 -
Ciss Input Capacitance - 1760 - VGS = 0V
Cass Output Capacitance - 960 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAs Single Pulse Avalanche Energy © _ 58 mJ
|AR Avalanche Current LO _ 9.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current -- -- 1 1 MOSFET symbol D
(Body Diode) A showing the
ISM Pulsed Source Current - - 91 integral reverse G
(Body Diode) C) p-n junction diode. q
l/so Diode Forward Voltage - (:1; I V :j . 'eii1,==9i,ti)tss==0l(d3,
in Reverse Recovery Time - 72 110 ns TJ = 25°C, IF = 9.0A, VR = 15V
a,, Reverse Recovery Charge - 93 140 nC di/dt = 100A/ps ©
tr, Reverse Recovery Time - 73 110 ns T J = 125°C, IF = 9.0A, I/n = 15V
er Reverse Recovery Charge - 100 150 nC di/dt = 100A/ps ©
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