IRF7811A ,28V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7811AHEXFET Power MOSFET
IRF7811ATR ,28V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7811AHEXFET Power MOSFET
IRF7811ATRPBF ,28V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications HEXFET Power MOSFET High Frequency Synchronous Buck Converters for Computer Proc ..
IRF7811AV ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications2 7S D• 100% R TestedG3 6SDDescription45G DThis new device employs advanced HEXFET Powe ..
IRF7811AVTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD-94009BIRF7811AVIRF7811AV• N-Channel Application-Specific MOSFETs• Ideal for CPU Core DC-DC Conve ..
IRF7811AVTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageElectrical CharacteristicsParameter Symbol Min Typ Max Units ConditionsDrain-to-Source Breakdown Vo ..
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IRF7811A-IRF7811ATR
28V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 93811
|RF7811A
HEXFET© Power MOSFET
International
TOR Rectifier
Applications
o High Frequency Synchronous Buck
Converters for Computer Processor Power
0 High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
0 100% RG Tested
Benefits
q Very Low RDS(on) at 4.5V VGS
o Ultra-Low Gate Impedance
0 Fully Characterized Avalanche Voltage
RDS(on) max
and Current '_... SO-8
Top View
Absolute Maximum Ratings
Symbol Parameter Max Units
ID @ TA = 25°C Continuous Drain Current, VGS @ 10V 11 ©
ID @ TA = 70°C Continuous Drain Current, I/ss @ 10V 9.1 G) A
los, Pulsed Drain Current co 91
Pro @TA = 25°C Power Dissipation © 2.5
Po ©T, = 70''C Power Dissipation © 1.6 W
Linear Derating Factor 0.02 W/°C
Ves Gate-to-Source Voltage tlf V
T J Operating Junction and
TSTG Storage Temperature Range -55 to + 150 'C
Smoldering Temperature, for 10 seconds 300 (1.6mm from case)
Thermal Resistance
Symbol Parameter Typ Max Units
ROJL Junction-to-Drain Lead 6) - 20
ROJA Junction-to-Ambient C96) - 50 "C/W
Notes co through S are on page 10
11/14/03
|RF7811A
International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Symbol Parameter Min. Typ. Max. Units Conditions
BVDss Drain-to-Source Breakdown Voltage 28 - - V VGS = 0V, b = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.025 - V/°C Reference to 25°C, ID = 1mA
Rosom Static Drain-to-Source On-Resistance - 8.7 10 m9 I/ss = 10V, ID = 11A ©
- IO 12 l/GS = 4.5V, ID = 9.0A Cw)
Vesan) Gate Threshold Voltage 1.0 - 3.0 V
. . Vos = VCs, b = 250PA
AVGsan) Gate Threshold Voltage Coefficient - -4.0 - mW'C
loss Drain-to-Source Leakage Current _- _- lf, HA "ct:: :2: X: . 2, T, = 100°C
Isss Gate-to-Source Forward Leakage - - 100 nA VGS = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
ge Forward Transconductance 28 - - S Vos = 15V, b = 9.0A
Qg Total Gate Charge --- 17 26
Qgs1 Pre-Vth Gate-Source Charge - 3.3 - Vos = 15V
0952 Post-Vth Gate-Source Charge - 1.3 - N/ss = 4.5V
an Gate-to-Drain Charge - 4.7 - nC b = 9.0A
ngdr Gate Charge Overdrive - 7.2 - See Fig. 16
st Switch Charge (Q952 + di) - 6.0 -
Qoss Output Charge - 24 - nC Ihos = 16V, I/ss = ov
Rs Gate Resistance 0.9 - 3.7 Q
tum) Turn-On Delay Time - 7.5 - Vor, = 15V, Vss = 4.5V G)
t, Rise Time - 4.1 - lo = 9.0A
tdmm Turn-Off Delay Time - 19 - ns Clamped Inductive Load
tr Fall Time - 6.5 -
Ciss Input Capacitance - 1760 - I/ss = 0V
Cass Output Capacitance - 960 - pF l/os = 15V
Crss Reverse Transfer Capacitance - 54 - f = 1.0MHz
Avalanche Characteristics
Symbol Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © _ 58 mJ
|AR Avalanche Current Ci) _ 9.0 A
Diode Characteristics
Symbol Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current _ _ 11 MOSFET symbol o
(Body Diode) A showing the
ISM Pulsed Source Current - - 91 integral reverse G
(Body Diode) (D p-n junction diode. R
Va, Diode Forward Voltage - 0.8 1.0 V To = 25''C, ls = 9.0A, VGS = 0V©
- 0.66 - To =125''C,ls = 9.0A, I/cs = 0V©
trr Reverse Recovery Time - 72 110 ns TJ = 25°C, IF = 9.0A, VR = 15V
Q,, Reverse Recovery Charge - 93 140 nC di/dt = 100/Ups ©
trr Reverse Recovery Time - 73 110 ns To = 125°C, IF = 9.0A, VR = 15V
2, Reverse Recovery Charge - 100 150 no di/dt = 100Alps ©
