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IRF7809AV-IRF7809AVTR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD-90010A
IFlF7809AV
o N-Channel Application-Specific MOSFETs
. Ideal for CPU Core DC-DC Converters
. Low Conduction Losses
. Low Switching Losses
. Minimizes Parallel MOSFETs for high current ')"iiiiii s mc-l 3:: D
applications _ H 2 7
. 100% Tested for He h 'iii',':::','; S I E I D
. . e:iti ' s 3:3 611: D
Description 4 5
This new device employs advanced HEXFET Power G L _LL. D
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The reduced SO-8 Top View
conduction and switching losses make it ideal for high
efficiency DC-DC converters that power the latest
generation of microprocessors.
DEVICE CHARACTERISTICS©
The IRF7809AV has been optimized for all parameters
that are critical in synchronous buck converters including IRF7809AV
RDs on , gate charge and Cdv/dt-induced turn-on immunity.
The IRF7809AV offers particulary low RDSW and high Rosmn) 7.0mQ
Cdv/dt immunity for synchronous FET applications. Q 41nC
The package is designed for vapor phase, intra-red, st 14nC
convection, or wave soldering techniques. Power Q 30nC
dissipation of greater than 2W is possible in a typical oss
PCB mount application.
Absolute Maximum Ratings
Parameter Symbol IRF7809A V Units
Drain-Source Voltage Vos 30 V
Gate-Source Voltage Vas :12
Continuous Drain or Source T, = 25°C l,, 13.3
Current (VGS 2 4.5V) TL = 90°C 14.6 A
Pulsed Drain Current© L, 100
Power Dissipation T, = 25°C PD 2.5 W
TL = 90°C 3.0
Junction & Storage Temperature Range TJ,TSTG -55 to 150 °C
Continuous Source Current (Body Diode) ls 2.5 A
Pulsed Source CurrentCD L, 50
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient© WA 50 °C/W
Maximum Junction-to-Lead ML 20 °C/W
8/23/05
IRF7809AV International
TOR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 30 - - V VGs = 0V, ID = 250pA
Breakdown Voltage
Static Drain-Source RDSM 7.0 9.0 m9 Vas = 4.5V, r, = 15A©
on Resistance
Gate Threshold Voltage VGSW 1.0 V VDs = G,(, = 250pA
Drain-Source Leakage |DSS 30 VDS = 24V, VGs = 0
Curren 150 PA vDs = 24V, Vas = o,
T] = 100°C
Gate-Source Leakage lass 1100 nA Vas = t121/
Current'
Total Gate Chg Cont FET as 41 62 VGS=5V, ID=15A, VDS=2OV
Total Gate Chg Sync FET q, 36 54 l/ss = 5V, l/w: 100mV
Pre-Vth ass, 7.0 Vos = 20V, r, = 15A
Gate-Source Charge
Post-Vth ass, 2.3 nC
Gate-Source Charge
Gate to Drain Charge %, 12 ID=15A, VDS=16V
Switch Chg(QgS2 + di) st 14 21
Output Charge' Qoss 30 45 V03 = 16V, l/ss = 0
Gate Resistance RG 1.5 3.0 Q
Turn-on Delay Time tam) 14 VDD = 16V, ID = 15A
Rise Time t, 36 ns Vas = 5V
Turn-off Delay Time t, (off) 96 Clamped Inductive Load
Fall Time t, 10
Input Capacitance Ciss - 3780 -
Output Capacitance COSS - 1060 - pF VDs = 16V, Vas = 0
Reverse Transfer Capacitance Crss - 130 -
Source-Drain Rating & Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Va, 1.3 V ls = 15A0), l/ss = 0V
Voltage'
Reverse Recovery Q,, 120 nC di/dt _ 700A/ps
Charge© vDs = 16V, vGS = OV, IS = 15A
Reverse Recovery OMS) 150 nC di/dt = 7OOA/ps
Charge (with Parallel (with 10BQO40)
Schottky)]) VDs = 16V, VGs = 0V, Is = 15A
Notes: C) Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width 3 400 ps; duty cycle I 2%.
CO When mounted on 1 inch square copper board, t < 10 sec.
© Typ = measured - 0055
G) Typical values measured at Vss = 4.5V, l, = 15A.
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