IRF7809A ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications.GQ 22.5 nC 7 nCswThe package is designed for vapor phase, infra-red,Q 30 nC 31 nCcon ..
IRF7809ATR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD - 93810PD - 93811IRF7809A/IRF7811A IRF7809A/IRF7811APROVISIONAL DATASHEET®• N-Channel Applicatio ..
IRF7809AV ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageapplications2 7S D 100% Tested for RG36S DDescription45G DThis new device employs advanced HEXFET ..
IRF7809AVTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD-90010AIRF7809AV N-Channel Application-Specific MOSFETs Ideal for CPU Core DC-DC Converters Lo ..
IRF7811A ,28V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7811AHEXFET Power MOSFET
IRF7811ATR ,28V Single N-Channel HEXFET Power MOSFET in a SO-8 packageIRF7811AHEXFET Power MOSFET
ISL54001IRTZ , Integrated Audio Amplifier Systems
ISL54050IRUZ-T , Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Dual SPDT Analog Switch
ISL54056IRUZ-T , Ultra Low ON-Resistance, 1.65V to 4.5V, Single Supply, Quad SPDT (Dual DPDT) Analog Switch
ISL54101CQZ , TMDS Regenerators with Multiplexers
ISL54101CQZ , TMDS Regenerators with Multiplexers
ISL54200IRUZ-T , USB 2.0 High/Full Speed Multiplexer
IRF7809A-IRF7809ATR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 93810
PD - 93811
IRF7809A/lRF7811A
PROVISIONAL DATASHEET
International
TOR Rectifier
. N-Channel Application-Specific MOSFETs
. Ideal for CPU Core DC-DC Converters
. Low Conduction Losses
. Low Switching Losses
. Minimizes Parallel MOSFETs for high current
applications
HEXFET6 Chipset for DC-DC Converters
SCIE‘ -3 D
Description
These new devices employ advanced HEXFET'r Power
MOSFET technology to achieve an unprecedented balance
of on-resistance and gate charge.The reduced conduction
and switching losses make them ideal for high efficiency
DC-DC converters that power the latest generation of
microprocessors.
Top View
Both the IRF7809A and IRF7811A have been optimized
and are 100% tested for all parameters that are critical in
DEVICE RATINGS
synchronous buck converters including RD on , gate charge IRF7809A |RF7811A
and Cdv/dt-induced turn-on immunity. The ih'iHiiij'u' offers
particulary low Rmon and high Cdv/dt immunity for VDS 30V 28V
synchronous FET 'is/gh/Gil/ii.'' The IRF7811A offers an R 8.5 mg 12 mn
extremely low combination of st & RDSmn) for reduced DS(on)
losses in control FET applications. QG 73 nC 23 nC
22. n 7 n
The package is designed for vapor phase, infra-red, (h, 5 C C
convection, or wave soldering techniques. Power Qoss 30 nC 31 nC
dissipation of greater than 2W is possible in a typical PCB
mountapplication.
Absolute Maximum Ratings
Parameter Symbol IRF7809A |RF7811A Units
Drain-Source Voltage VDS 30 28 V
Gate-Source Voltage VGS 112
Continuous Drain or Source T, = 25°C r, 14.5 11.4
Current (VGS 2 4.5V) TL = 90°C 14.2 11.2 A
Pulsed Drain CurrentCD IBM 100 100
Power Dissipation T, = 25°C PD 2.5 W
TL = 90°C 2.4
Junction & Storage Temperature Range T J' TSTG -55 to 150 ''C
Continuous Source Current (Body Diode) ls 2.5 2.5 A
Pulsed Source CurrentCD Is,, 50 50
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient® RNA 50 °CNV
Maximum Junction-to-Lead M 25 °CNV
www.Irf.com 1
01/19/00
IRF7809A/lRF7811A
International
IEER Rectifier
Electrical Characteristics IRF7809A IRF7811A
Parameter Min Typ Max Min Typ Max Units Conditions
Drain-to-Source BVDss 30 - - 28 - - V VGS = 0V, ID = 250pA
Breakdown Voltage*
Static Drain-Source Rosa") 7 8.5 10 12 mn VGs = 4.5V, ID = 15A©
on Resistance'
Gate Threshold Voltage* Vegan) 1.0 1.0 V VDs =VGS,ID = 250pA
Drain-Source Leakage loss 30 30 pA Vos = 24V, VGS = 0
Current' .
V 150 150 Vos = 24V, VGS = 0,
T] = 100°C
Gate-Source Leakage (sss i100 i100 nA VGS = t121/
Current'
Total Gate Chg Cont FET* QG 61 75 19 23 VGS=5V, ID=15A,VDS=16V
Total Gate Chg Sync FET* QG 55 73 17 20.5 VGS = 5V, VDS< 100mV
Pre-Vth Qss, 14 2.7 VDS = 16V, r, = 15A
Gate-Source Charge
Post-Vth QGSZ 3.5 1.3 nC
Gate-Source Charqe
Gate to Drain Charge Ca, 13.5 4.5
Switch Chg(Qgsz + di)* st 17 22.5 5.8 7.0
Output Charge' Qos,, 25 30 26 31 V08 = 16V, VGS = 0
Gate Resistance RG 1.1 1.8 Q
Turn-on Delay Time tam”) 19 8 VDD = 16V, ID = 15A
Rise Time t, 9 4 ns I/ss = 5V
Turn-off Delay Time t, (off) 32 16 Clamped Inductive Load
Fall Time i; 12 8
Input Capacitance Ciss - 7300 - - 1800 -
Output Capacitance C065 - 900 - - 900 - pF VDS = 16V, VGS = 0
Reverse Transfer Capacitance Crss - 350 - - 60 -
Source-Drain Rating & Characteristics
Parameter Min Typ Max Min Typ Max Units Conditions
Diode Forward VSD 1.0 1.0 V Is = 15A0), I/ss = 0V
Voltage'
Reverse Recovery q, 94 82 nC di/dt _ 700A/ps
Char e© - - -
g bf,s--tt1fi(ss-=orf Is-15A
Reverse Recovery OMS) 87 74 di/dt = 700Alps
Charge (with Parallel (with 1OBQO40)
Schottky)© VDS = 16V, Vas = 0V, IS = 15A
Notes:
co Repetitive rating; pulse width limited by max. junction temperature.
co Pulse width f 300 ps,' duty cycle s 2%.
© When mounted on 1 inch square copper board, t < 10 sec.
© Typ = measured - Qoss
* Devices are 100% tested to these parameters.
2 WWW. irf.com
