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IRF7809A from IR,International Rectifier

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IRF7809A

Manufacturer: IR

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package

Partnumber Manufacturer Quantity Availability
IRF7809A IR 20897 In Stock

Description and Introduction

30V Single N-Channel HEXFET Power MOSFET in a SO-8 package The IRF7809A is a power MOSFET manufactured by Infineon Technologies. Below are the key specifications, descriptions, and features from Ic-phoenix technical data files:  

### **Manufacturer:** Infineon Technologies  
### **Part Number:** IRF7809A  

### **Description:**  
- The IRF7809A is an N-channel power MOSFET designed for high-efficiency power management applications.  
- It is optimized for low on-state resistance (RDS(on)) and fast switching performance.  

### **Key Features:**  
- **Voltage Rating (VDSS):** 30V  
- **Current Rating (ID):** 62A (continuous) at 25°C  
- **On-Resistance (RDS(on)):**  
  - 4.5 mΩ (max) at VGS = 10V  
  - 5.5 mΩ (max) at VGS = 4.5V  
- **Gate Threshold Voltage (VGS(th)):** 1.0V (min) to 2.5V (max)  
- **Power Dissipation (PD):** 200W (at 25°C case temperature)  
- **Package:** TO-220AB (through-hole)  
- **Avalanche Energy Rated (EAS):** 320mJ  
- **Fast Switching Speed:** Suitable for high-frequency applications  
- **Low Gate Charge (Qg):** 60nC (typical)  
- **Low Input Capacitance (Ciss):** 3600pF (typical)  

### **Applications:**  
- DC-DC converters  
- Motor control  
- Power supplies  
- Synchronous rectification  

This information is based strictly on the manufacturer's datasheet and technical specifications.

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