IRF7807ZTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg(typ.)DSS DS(on) Control FET for Notebook Processor Power13.8m
IRF7807ZTRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD-95211B
International
TOR Rectifier IRF7807ZPbF
HEXFET© Power MOSFET
ApglictatilinEsTf N t b kP P Voss RDS(on)n1ax Qg(typ0
q on ro or o e oo rocessor ower -
o Synchronous Rectifier MOSFET for 30V 13.8mf2@Vss - 10V 7.2nC
Graphics Cards and POL Converters in
Networking and Telecommunication
Systems
s E011 8 D
Benefits 2 7
S CU] B CD] D
q Very Low RDS(on) at 4.5V I/ss 3 m i e
o Ultra-Low Gate Impedance s E m D
o Fully Characterized Avalanche Voltage G EDA 5m D
and Current Top View SO-8
q 100% Tested for Rs
o Lead-Free
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage i 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 11
ID @ TA = 70°C Continuous Drain Current, VGS @ 10V 8.7 A
loss Pulsed Drain Current CD 88
PD @TA = 25°C Power Dissipation © 2.5 W
Pro @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
Tu Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Ron, Junction-to-Drain Lead - 20 "C/W
ROJA Junction-to-Ambient © - 50
Notes co through GD are on page 10
1
6/29/06
IRF7807ZPbF International
Static @ T J = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V I/ss = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. CoetMient - 0.023 - V/°C Reference to 25°C, ID = 1mA
Roam) Static Drain-to-Source On-Resistance - 11 13.8 mn VGS = 10V, ID = 11A OD
- 14.5 18.2 VGS = 4.5V, ID = 8.8A co
V650,.) Gate Threshold Voltage 1.35 1.8 2.25 V Ws = VGS, b = 250pA
AVGSm Gate Threshold Voltage CoefMient - - 4.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, VGS = 0V
- - 150 Vos = 24V, VGS = 0V, T: = 125°C
IGSS Gate-to-Source Forward Leakage - - 100 nA I/ss = 20V
Gate-to-Source Reverse Leakage - - -100 VGS = -20V
gfs Forward Transconductance 22 - - S I/ns = 15V, ID = 8.8A
q, Total Gate Charge - 7.2 11
As, Pre-Vth Gate-to-Source Charge - 2.1 - Vos = 15V
Qgsz Post-Vth Gate-to-Source Charge - 0.7 - nC VGS = 4.5V
di Gate-to-Drain Charge - 2.7 - lo = 8.8A
ngd, Gate Charge Overdrive - 1.7 - See Fig. 16
st Switch Charge (Qgsz + di) - 3.4 -
Qoss Output Charge - 2.8 - nC Vos = 15V, sz = OV
Rs Gate Resistance - 2.5 4.8 Q
td(on) Turn-On Delay Time - 6.9 - VDD = 15V, VGS = 4.5V ©
t, Rise Time - 6.2 - ID = 8.8A
tam Turn-Off Delay Time - 1O - ns Clamped Inductive Load
tf Fall Time - 3.1 -
Ciss Input Capacitance - 770 - VGs = 0V
Coss Output Capacitance - 190 - pF l/os = 15V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 63 mJ
IAR Avalanche Current CD - 8.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the L-a,
ISM Pulsed Source Current - - 88 integral reverse 9 (rd,
(Body Diode) CD p-n junction diode. fl
Vso Diode Forward Voltage - - 1.0 v T J = 25°C, IS = 8.8A, VGS = ov ©
trr Reverse Recovery Time - 31 46 ns TJ = 25°C, IF = 8.8A, VDD = 15V
Qrr Reverse Recovery Charge - 17 26 nC di/dt = 100A/ps ©
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