IRF7807ZTR ,Leaded 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package IRF7807ZHEXFET Power MOSFET
IRF7807ZTR ,Leaded 30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg(typ.)DSS DS(on) Control FET for Notebook Processor Power13.8m@V = 10V30V 7. ..
IRF7807ZTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg(typ.)DSS DS(on) Control FET for Notebook Processor Power13.8m
IRF7807ZTR
Leaded 30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94707A
International
TOR. Rectifier IRF7807Z
HEXFET® Power MOSFET
Applications
q Control FETforNotebook ProcessorPower Voss Rrosion) max Qg(typ.)
o Synchronous Rectifier MOSFET for 30V 13-8mQ@VGs = 10V 7.2nC
Graphics Cards and POL Converters in
Networking and Telecommunication
Systems
s nrp I “313 D
Benefits s :11 7:1: D
0 Very Low RDs(on) at 4.5V l/ss 3 E 6
o Ultra-Low Gate Impedance s ID LIL] D
0 Fully Characterized Avalanche Voltage G M4 s-UL] D
and Current Top View SO-8
. 100% Tested for He
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
Vss Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V 11
ID @ T, = 70°C Continuous Drain Current, l/ss @ 10V 8.7 A
IDM Pulsed Drain Current co 88
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead - 20 °CNV
Ross Junction-to-Ambient C9 _ 50
Notes co through © are on page 10
1
7/1 /05
IRF7807Z
International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250pA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 11 13.8 mg Ves = 10V, ID = 11A ©
- 14.5 18.2 Vss = 4.5V, ID = 8.8A ©
Vesuh) Gate Threshold Voltage 1.35 1.8 2.25 V Vos = Vas, ID = 250pA
Avesoh) Gate Threshold Voltage Coefficient - - 4.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vas = 0V
- - 150 Vos = 24V, VGS = 0V, TJ = 125°C
lass Gate-to-Source Forward Leakage - - 100 nA Ves = 20V
Gate-to-Source Reverse Leakage - - -1OO Vas = -20V
gfs Forward Transconductance 22 - - S Vos = 15V, ID = 8.8A
Qg Total Gate Charge - 7.2 11
0951 Pre-Vth Gate-to-Source Charge - 2.1 - Vos = 15V
Q982 Post-Vth Gate-to-Source Charge - 0.7 - nC Vas = 4.5V
di Gate-to-Drain Charge - 2.7 - ID = 8.8A
ngd, Gate Charge Overdrive - 1.7 - See Fig. 16
st Switch Charge (Q952 + di) - 3.4 -
Qoss Output Charge - 2.8 - nC VDS = 15V, Vas = 0V
Rs Gate Resistance - 2.5 4.8 Q
tdmn, Turn-On Delay Time - 6.9 - VDD = 15V, Vas = 4.5V ©
t, Rise Time - 6.2 - ID = 8.8A
tdmm Turn-Off Delay Time - 10 - ns Clamped Inductive Load
t, Fall Time - 3.1 -
Ciss Input Capacitance - 770 - Vas = 0V
Coss Output Capacitance - 190 - pF Vrys = 15V
Crss Reverse Transfer Capacitance - 100 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 63 mJ
|AR Avalanche Current CD - 8.8 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 88 integral reverse G E
(Body Diode) co p-n junction diode. fl
VSD Diode Forward Voltage - - 1.0 V TJ = 25°C, IS = 8.8A, Vas = 0V ©
tr, Reverse Recovery Time - 31 46 ns To = 25°C, IF = 8.8A, VDD = 15V
Qrr Reverse Recovery Charge - 17 26 nC di/dt = 100A/ps s
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