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IRF7807VPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD-95210
lRF7807VPbF
HEXFET© Power MOSFET
. N Channel Application Specific MOSFET
I Ideal for Mobile DC-DC Converters
. Low Conduction Losses
. Low Switching Losses . a
. 100% R, Tested IILD
. Lead-Free _ D
6:3: D
Description 5 311 C)
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented SO-8 Top View
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that DEVICE CHARACTERISTICS)
power the latest generation of mobile microprocessors.
. . . IRF7807V
A pair of IRF7807V devices provides the best cost/ R 17 mn
performance solution for system voltages, such as DSW)
3.3V and 5V. 09 9.5 nC
st 3.4 nC
Qoss 12 nC
Absolute Maximum Ratings
Parameter Symbol IRF7807V Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage Vss t20
Continuous Drain or Source TA = 25°C I 8.3
(I/ss 2 4.5V) TA = 70°C D 6.6 A
Pulsed Drain Current C) IBM 66
T = 25°C
Power Dissipation © A PD 2.5 W
TA = 70°C 1.6
Junction & Storage Temperature Range T J , TSTG -55 to 150 °C
Continuous Source Current (Body Diode) ls 2.5
Pulsed Source Current co ISM 66 A
Thermal Resistance
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient ©© REJA - 50 °C/W
Maximum Junction-to-Lead © RQJL - 20
11/3/04
IRF7807VPbF International
TOR Rectifier
Electrical Characteristics
Parameter Symbol Min Typ Max Units Conditions
Drain-Source Breakdown Voltage BVDSS 30 - - V Vss = 0V, ID = 250PA
Static Drain-Source On-Resistance RDswn, - 17 25 mn l/ss = 4.5V, ID = 7.0A ©
Gate Threshold Voltage VGS(th) 1.0 - 3.0 V Vos = VGS, ID = 250pA
- - 100 Vos = 30v, l/ss = 0
Drain-Source Leakage Current loss - - 20 pA Vos = 24V, VGS = O
- - 100 Vos = 24V, l/ss = o, T J = 100°C
Gate-Source Leakage Current' less - - 1100 nA Vss = 1 20V
Total Gate Charge' Qs - 9.5 14 Vss = 5V, ID = 7.0A
Pre-Vth Gate-Source Charge QGS1 - 2.3 - Vos = 16V
Post-Vth Gate-Source Charge ass2 - 1.0 - nC
Gate-to-Drain Charge QGD - 2.4 -
Switch Charge (0952 + di) st - 3.4 5.2
Output Charge* Qoss - 12 16.8 Vos = 16V, VGS = 0
Gate Resistance Re 0.9 - 2.8 Q
Turn-On Delay Time td(on) - 6.3 - VDD = 16V
Rise Time t, - 1.2 - ns ID = 7A
Turn-Off Delay Time td(ott) - 11 - Vss = 5V, RG = 29
Fall Time t, - 2.2 - Resistive Load
Source-Drain Ratings and Characteristics
Parameter Symbol Min Typ Max Units Conditions
Diode Forward Voltage' Vso - - 1.2 V ls = 7.0A © Nas = 0V
Reverse Recovery Charge © Qrr - 64 - di/dt = 700A/ps
nC Vos = 16V, VGS = 0V, ls = 7.0A
Reverse Recovery Charge di/dt = 700A/ps t (with 1OBQO40)
(with Parallel Schottsky) © OMS) - 41 - Vos = 16V, VGS = ov, ls = 7.0A
Notes: Repetitive rating; pulse width limited by max. junction temperature.
Pulse width S 400 ps; duty cycle I 2%.
When mounted on 1 inch square copper board
Typ = measured - QOSS
Typical values of RDS(on) measured at Vss = 4.5V, Qs, QSW and Q
measured at Vss = 5.0V, IF = 7.0A.
Ro is measured at To approximately 90°C
Device are 100% tested to these parameters.
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