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IRF7807VD2TRPBF
30V FETKY
International PD-95291
TOR Rectifier IRF7807VD2PbF
FETKYTM MOSFET I SCHOTTKY DIODE
. Co-Pack N-channel HEXFET© Power MOSFET
and Schottky Diode
. Ideal for Synchronous Rectiflers in DC-DC AIS DI
Converters Up to 5A Output NS m
. Low Conduction Losses
. Low Switching Losses A/S =
. Low Vf Schottky Rectifier G DI
. Lead-Free
Top View
Description SO-8
The FETKW" family of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs DEVICE CHARACTERlSTlCSS
utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. Combining
this technology with International Rectifler's low forward IRF7807VD2
drop Schottky rectifiers results in an extremely efficient RDSW 17mQ
device suitable for use in a wide variety of portable Q 9.5nC
electronics applications. G
st 3.4nC
The SO-8 has been modified through a customized Q 12nC
Ieadframe for enhanced thermal characteristics. The SO- oss
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter Symbol Max. Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage I/ss :20
Continuous Drain or Source 25°C r, 8.3
Current (VGS 2 4.5V) 70°C 6.6 A
Pulsed Drain Current© u, 66
Power Dissipation© 25°C PD 2.5 W
70°C 1.6
Schottky and Body Diode 25°C l,, (AV) 3.7 A
Average ForwardCurrent© 70°C 2.3
Junction & Storage Temperature Range TJ,TSTG -55 to 150 °C
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient® WA 50 °CNV
Maximum Junction-to-Lead M 20 °C/W
1
10/08/04
IRF7807VD2PbF International
TOR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 3O - - V VGS = 0V, r, = 250uA
Breakdown Voltage
Static Drain-Source Rosom 17 25 m9 VGS = 4.5V, ID = 7.0A©
on Resistance
Gate Threshold Voltage Vegan) 1.0 V VDs = VGSJD = 250uA
Drain-Source Leakage IDSS 50 pA VDS = 24V, VGS = 0
Current 6.0 mA vDS = 24V, N/ss = o,
T] = 100°C
Gate-Source Leakage |GSS i100 nA VGS = 120V
Current*
Total Gate Charge' QG 9.5 14 VGS=4.5V, |D=7.OA
Pre-Vth QGs1 2.3
Gate-Source Charge VDS = 16V
Post-Vth QGSZ 1.0 nC
Gate-Source Charge
Gate to Drain Charge QGD 2.4
Switch Chg(Qas2 + Qua) st 3.4 5.2
Output Charge* Qoss 12 16.8 VDS = 16V, VGS = 0
Gate Resistance Rs 2.0 Q
Turn-on Delay Time tam 6.3 VDD = 16V, ID = 7.0A
Rise Time t, 1.2 ns I/ss = 5V, Re: 29
Turn-off Delay Time t, (off) 11 Resistive Load
Fall Time t, 2.2
Schottky Diode & Body Diode Ratings and Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Voltage Va, 0.54 V T,-- 25°C, l, = 3.0A, Vm =0Va)
0.43 Ts-- 125°C, l,, = 3.0A, VGS =ON/a)
Reverse Recovery Time trr 36 ns Ts-- 25°C, Is = 7.0A, VDS = 16V
Reverse Recovery Charge er 41 nC di/dt = 1OOA/ps
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by Lil,)
Notes: co Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 400 ps; duty cycle f 2%.
(T When mounted on 1 inch square copper board
(il) 50% Duty Cycle, Rectangular
© Typical values of RDS(on) measured at VGS = 4.5V, Qs, QSW and Qoss
measured at I/ss = 5.0V, IF = 7.0A.
* Device are 100% tested to these parameters.
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