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IRF7807VD2-IRF7807VD2TR
30V FETKY
International PD-94079
TOR Rectifier IRF7807VD2
FETKYTM MOSFET I SCHOTTKY DIODE
. Co-Pack N-channel HEXFET© Power MOSFET
and Schottky Diode A/S l
. Ideal for Synchronous Rectiflers in DC-DC AIS 2
Converters Up to 5A Output 3
. Low Conduction Losses A/S
. Low Switching Losses G 4
. Low Vf Schottky Rectifier
Description SO-8 Top View
The FETK TN family ofCo-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve DEVICE CHARACTERlSTlCSS
extremely low on-resistance per silicon area. Combining
this technology with International Rectifer's low forward IRF7807VD2
drop Schottky rectifers results in an extremely efficient R 17mn
device suitable for use in a wide variety of portable Dsm
electronics applications. Qs 9.5nC
st 3.4nC
The SO-8 has been modified through a customized Q 12 C
leadframe for enhanced thermal characteristics. The SO- oss n
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter Symbol Max. Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage I/ss :20
Continuous Drain or Source 25°C r, 8.3
Current (VGS 2 4.5V) 70°C 6.6 A
Pulsed Drain Currentc0 u, 66
Power Dissipation© 25°C PD 2.5 W
70°C 1.6
Schottky and Body Diode 25''C l,, (AV) 3.7 A
Average ForwardCurrent© 70°C 2.3
Junction & Storage Temperature Range T J,TSTG -55 to 150 "C
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient® R,,, 50 °CNV
Maximum Junction-to-Lead R,,, 20 °C/W
1
03/05/01
IRF7807VD2 International
TOR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source BVDSS 3O - - V VGS = 0V, r, = 250pA
Breakdown Voltage
Static Drain-Source Roson) 17 25 m9 VGS = 4.5V, ID = 7.0A©
on Resistance
Gate Threshold Voltage Vegan) 1.0 V VDs = VGSJD = 250uA
Drain-Source Leakage IDSS 50 pA VDS = 24V, VGS = 0
Current 6.0 mA vDS = 24V, vGS = o,
T] = 100°C
Gate-Source Leakage |GSS i100 nA VGS = 120V
Current*
Total Gate Charge' QG 9.5 14 VGS=4.5V, |D=7.OA
Pre-Vth 0651 2.3
Gate-Source Charge VDS = 16V
Post-N/th QGSZ 1.0 nC
Gate-Source Charge
Gate to Drain Charge QGD 2.4
Switch Chg(Qas2 + Qua) st 3.4 5.2
Output Charge* Qoss 12 16.8 VDS = 16V, VGS = 0
Gate Resistance Rs 2.0 Q
Turn-on Delay Time 1mm 6.3 VDD = 16V, ID = 7.0A
Rise Time t, 1.2 ns I/ss = 5V, Re: 29
Turn-off Delay Time t, (off) 11 Resistive Load
Fall Time t, 2.2
Schottky Diode & Body Diode Ratings and Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Voltage Va, 0.54 V T,-- 25°C, l, = 3.0A, Vm =OV©
0.43 Ts-- 125°C, Is = 3.0A, VGS =OV©
Reverse Recovery Time trr 36 ns Ts-- 25°C, Is = 7.0A, It, = 16V
Reverse Recovery Charge On 41 nC di/dt = 1OOA/ps
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by Lil,)
Notes: co Repetitive rating; pulse width limited by max.junction temperature.
© Pulse width f 400 ps; duty cycle S 2%.
CO When mounted on 1 inch square copper board
(4) 50% Duty Cycle, Rectangular
s Typical values of RDS(on) measured atVGS = 4.5V, 06, QSW and Qoss
measured at Vs, = 5.0V, IF = 7.0A.
* Device are 100% tested to these parameters.
2
