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IRF7807VD1-IRF7807VD1TR
30V FETKY
International PD-94078A
TOR Rectifier IRF7807Vly1
© FETKYTM MOSFETI SCHOTTKY DIODE
. Co-Pack N-channel HEXFET Power MOSFET
and Schottky Diode
. Ideal for Synchronous Rectihers in DC-DC AIS l
Converters Up to 5A Output AIS 2
. Low Conduction Losses
. Low Switching Losses NS 3
. Low Vf Schottky Rectifier G 4
. 100% R3 Tested
Description SO-8 Top View
The FETKW" family of Co-Pack HEXFET®MOSFETs and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve DEVICE CHARACTERISTICS)
extremely low on-resistance per silicon area. Combining
this technology with International Rectifer's low forward IRF7807VD1
drop Schottky rectifiers results in an extremely efficient R 17mQ
device suitable for use in a wide variety of portable DS(on)
electronics applications. Cls 9.5nC
QSW 3.4nC
The SO-8 has been modified through a customized
Ieadframe for enhanced thermal characteristics. The SO- Qoss 12nC
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter Symbol Max Units
Drain-to-Source Voltage I/os 30 V
Gate-to-Source Voltage I/ss 120
Continuous Output Current 25°C I 8.3 A
(vGS 2 4.5V) 70°C D 6.6
Pulsed Drain Current OD G, 66
. . . 25°C 2.5
Power Dissipation © 70°C PD 1.6 W
Schottky and Body Diode 25°C I (AV) 3.5
Average Forward Current GD 70°C F 2.2
Junction & Storage Temperature Range TJ , TSTG -55 to 150 "C
Thermal Resistance
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient © © Ram - 50 o
. . CNV
Maximum Junction-to-Lead © ' - 20
1
11/12/03
IRF7807VD1 International
TOR Rectifier
Electrical Characteristics
Parameter Symbol Min Typ Max Units Conditions
Drain-Source Breakdown Voltage BVDSS 30 - - V l/ss = 0V, ID = 250pA
Static Drain-Source On-Resistance RDSW) - 17 25 mo VGS = 4.5V, ID = 7.0A ©
Gate Threshold Voltage VGsah) 1.0 - 3.0 V I/os = VGS, ID = 250PA
- - 100 pA Vos = 30V, vGS = 0v
Drain-Source Leakage Current loss - - 20 PA Vos = 24V, VGS = 0V
- - 2.0 mA Vos = 24V, VGS = 0V, TJ = 100°C
Gate-Source Leakage Current less - - i100 nA VGS = i 20V
Total Gate Charge' 06 - 9.5 14
Pre-l/th Gate-Source Charge 0631 - 2.3 - VDS = 4.5V
Post-N/th Gate-Source Charge QGSZ - 1.0 - nC ID = 7.0A
Gate-to-Drain Charge Qa, - 2.4 - Vos = 16V
Switch Charge (0952 + di) Qsw - 3.4 5.2
Output Charge* Qoss - 12 16.8 I/ns = 16V, Vss = 0
Gate Resistance Re 0.9 - 2.8 Q
Turn-On Delay Time trom - 6.3 - Vor, = 16V, ID = 7.0V
Rise Time t, - 1.2 - l/GS = 5V, Rs = 29
Turn-Off Delay Time tum, - 11 - ns Resistive Load
Fall Time t, - 2.2 -
Diode Characteristics
Parameter Symbol Min Typ Max Units Conditions
Diode Forward Voltage Va, - - 0.5 V TJ = 25°C, ls = 1.0A J/ss = OVC)
- - 0.39 T = 125°C, ls = 1.0A, VGS = OV0)
Reverse Recovery Time © trr - 51 - ns di/dt = 700A/ps
I/or, =16V,VGs = 0v, ID = 15A
T = 25°C, I = 7.0A ,V = 16V
Reverse Recovery Charge GD Q,, - 51 - nC ii); = 100AS/ps DS
Notes: Repetitive rating; pulse width limited by max. junction temperature.
Pulse width S 400 psi duty cycle 5 2%.
When mounted on 1 inch square copper board
50% Duty Cycle, Rectangular
Typical values of RDs(on) measured at Va, = 4.5V, 06, QSW and Q
Ro is measured at Tu approximately 90°C
Device are 100% tested to these parameters.
measured at VGS = 5.0V, IF = 7.0A.
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