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IRF7807V-IRF7807VTR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
N Channel Application Specific MOSFET
Ideal for Mobile DC-DC Converters
PD-9401 8A
IRF7807V
HEXFET© Power MOSFET
. Low Conduction Losses
. Low Switching Losses . a
. 100% RGTested IILD
6:3: D
Description 5 311 C)
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented SO-8 Top View
balance of on-resistance and gate charge. The
reduction of conduction and switching losses makes
it ideal for high efficiency DC-DC Converters that DEVICE CHARACTERISTICS)
power the latest generation of mobile microprocessors.
. I I IRF7807V
A par of IRF7807V devices provides the best cost/ R 17 mn
performance solution for system voltages, such as DS(on)
3.3V and 5V. Q9 9.5 nC
st 3.4 nC
Qoss 12 nC
Absolute Maximum Ratings
Parameter Symbol IRF7807V Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS 3:20
Continuous Drain or Source TA = 25°C I 8.3
(N/ss 2 4.5V) TA = 70°C D 6.6 A
Pulsed Drain Current C) IBM 66
. . . TA = 25°C 2.5
Power Dissipation © PD W
TA = 70°C 1.6
Junction & Storage Temperature Range T: , TSTG -55 to 150 ''C
Continuous Source Current (Body Diode) ls 2.5
Pulsed Source Current co ISM 66 A
Thermal Resistance
Parameter Symbol Typ Max Units
Maximum Junction-to-Ambient ©© ReJA - 50 °C/W
Maximum Junction-to-Lead © ' - 20
11/12/03
IRF7807V International
TOR Rectifier
Electrical Characteristics
Parameter Symbol Min Typ Max Units Conditions
Drain-Source Breakdown Voltage BVDSS 30 - - V VGS = 0V, ID = 250pA
Static Drain-Source On-Resistance RDSwn) - 17 25 mn I/ss = 4.5V, ID = 7.0A ©
Gate Threshold Voltage VGSM) 1.0 - 3.0 V Vos = VGS, ID = 250PA
- - 100 Vos = 30V, Vss = 0
Drain-Source Leakage Current loss - - 20 pA Vos = 24V, N/ss = 0
- - 100 Vos = 24V, Vss = 0, T: = 100°C
Gate-Source Leakage Current* less - - i100 nA VGS = * 20V
Total Gate Charge" Qs - 9.5 14 I/ss = 5V, ID = 7.0A
Pre-Vth Gate-Source Charge QGs1 - 2.3 - Vos = 16V
Post-Vth Gate-Source Charge Qss2 - 1.0 - nC
Gate-to-Drain Charge QGD - 2.4 -
Switch Charge (Qgsz + di) Qsw - 3.4 5.2
Output Charge* Qoss - 12 16.8 Vos = 16V, N/ss = 0
Gate Resistance Rs 0.9 - 2.8 Q
Turn-On Delay Time tam) - 6.3 - VDD = 16V
Rise Time t, - 1.2 - ns ID = 7A
Turn-Off Delay Time tdmm - 11 - VGS = 5V, Rs = 29
Fall Time t, - 2.2 - Resistive Load
Source-Drain Ratings and Characteristics
Parameter Symbol Min Typ Max Units Conditions
Diode Forward Voltage' VSD - _ 1.2 V Is = 7.0A © ,VGS = 0V
Reverse Recovery Charge © l - 64 - di/dt = 700Alps
nC Vos =16V,Vcs = 0V, ls = 7.0A
Reverse Recovery Charge di/dt = 700/Ups , (with 1OBQ040)
(with Parallel Schottsky) © Qrr(s) - 41 - Vos = 16V, Vcs = 0V, ls = 7.0A
Notes: C) Repetitiverating;pulsewidthlimited by max.junctiontemperature.
2 Pulse width S 400 us; duty cycle I 2%.
(3 When mounted on 1 inch square copper board
G.) Typ = measured - Q05:
Cs) Typical values of RDS(on) measured at Vss = ASN, 06, QSW and Qoss
measured at VGS = 5.0V, l, = 7.0A.
(6) Ro is measured at To approximately 90°C
* Device are 100% tested to these parameters.
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