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IRF7807D2TRPBF
30V FETKY
International
:raRliUctifier
. Co-Pack N-channel HEXFET© Power MOSFET
PD- 95436A
|RF7807D2PbF
FETKYTM MOSFET/SCHOTTKY DIODE
and Schottky Diode
. Ideal for Synchronous Rectifiers in DC-DC AIS
Converters up to 5A Output AIS m
. Low Conduction Losses
. Low Switching Losses AIS Em
. Low Vf Schottky Rectifier G
. Lead-Free
SO-8 Top View
Description
The FETKY'" family of Co-Pack HEXFET® MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power Device Features (Max Values)
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. IRF7807D2
Combining this technology with International Rectifer's Vos 30V
low forward drop Schottky rectihers results in an extremely RDs(on) 25mQ
efficient device suitable for use in a wide variety of q, 14nC
portable electronics applications. st 5.2nC
Qoss 21 .6nC
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter Symbol Max. Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS $12
Continuous Drain or Source 25°C r, 8.3
Current (VGS 2 4.5V) 70°C 6.6 A
Pulsed Drain CurrentC) DM 66
Power Dissipation 25°C PD 2.5 W
70°C 1.6
Schottky and Body Diode 25°C IF (AV) 3.7 A
Average ForwardCurrent© 70°C 2.3
Junction & Storage Temperature Range TJ,TSTG -55 to 150 °C
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-AmbientG) RBJA 50 °C/W
1
10/7/04
IRF7807D2PbF International
IDR Rectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source V(mDSS 30 V VGS = 0V, ID = 250pA
Breakdown Voltage'
Static Drain-Source RDs(on) 17 25 m9 I/ss = 4.5V, ID = 7AOD
on Resistance*
Gate Threshold Voltage* VGS(th) 1.0 V VDs = VGSJD = 250pA
Drain-Source Leakage loss 90 “A VDs = 24V, VGs = 0V
Current* 7.2 mA VDS = 24V, VGS = 0V,
T, = 125°C
Gate-Source Leakage |GSS +/- 100 nA I/ss = +/-12V
Current'
Total Gate Charge Qgsync 10.5 14 VDS<100mV,
Synch FET* VGS = 5V, ID = 7A
Total Gate Charge Qgcom 12 17 V03: 16V,
Control FET* VGS = 5V, ID = 7A
Pre-Vth 0931 2.1 VDS = 16V, ID = 7A
Gate-Source Charge
Post-Vth Qgs2 0.76 nC
Gate-Source Charge
Gate to Drain Charge 09,, 2.9
Switch Charge' Qsw 3.66 5.2
(Qgsz + di)
Output Charge' Qoss 17.6 21.6 VDS = 16V, VGS = 0
Gate Resistance R, 1.2 Q
Schottky Diode & Body Diode Ratings and Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Voltage Va, 0.54 V Ti = 25°C, L = 3A, l/ry, =0Va
0.43 I = 125°C, IS = 3A, Va, --0Vz
Reverse Recovery Time trr 36 ns T, = 25°C, l, = 7.0A, Vos = 16V
Reverse Recovery Charge On 41 nC di/dt = 100A/ps
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C) Repetitive rating; pulse width limited by max. junction temperature.
Q) Pulse width f 300 us; duty cycle S 2%.
(3 When mounted on 1 inch square copper board, t < 10 sec.
CI) 50% Duty Cycle, Rectangular
* Devices are 100% tested to these parameters.
2
