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IRF7807D2-IRF7807D2TR
30V FETKY
. PD- 93 62
International 7
TOR Rectifier IRF7807D2
FETKYTM MOSFET/SCHOTTKY DIODE
. Co-Pack N-channel HEXFET© Power MOSFET
and Schottky Diode AIS E
. Ideal for Synchronous Rectihers in DC-DC AIS =
Converters up to 5A Output AIS II
. Low Conduction Losses
. Low Switching Losses G =
. Low Vf Schottky Rectifier SO-8 Top View
Description
The FETK TV family of Co-Pack HEXFET@ MOSFETs
and Schottky diodes offers the designer an innovative,
board space saving solution for switching regulator and
power management applications. HEXFET power Device Features(Max Values)
MOSFETs utilize advanced processing techniques to
achieve extremely low on-resistance per silicon area. IRF7807D2
Combining this technology with International Rectifler's Ihos 30V
low forward drop Schottky rectiflers results in an extremely Rrss(on) 25mg
efficient device suitable for use in a wide variety of Q, 14nC
portable electronics applications. st 5.2nC
Qoss 21 .6nC
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics. The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter Symbol Max. Units
Drain-Source Voltage Vos 30 V
Gate-Source Voltage Vss t12
Continuous Drain or Source 25°C IE) 8.3
Current (VGS 2 4.5V) 70°C 6.6 A
Pulsed Drain Currentc0 IDM 66
Power Dissipation 25°C PD 2.5 W
70°C 1.6
Schottky and Body Diode 25°C l,, (AV) 3.7 A
Average ForwardCurrent© 70°C 2.3
Junction & Storage Temperature Range T J,TSTG -55 to 150 °C
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient® Ra, 50 °C/W
1
11/8/99
IRF7807D2 International
TOR iiectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source V(BR)DSS 30 V VGS = 0V, ID = 250pA
Breakdown Voltage'
Static Drain-Source RDS(on) 17 25 m9 I/ss = 4.5V, ID = 7A©
on Resistance'
Gate Threshold Voltage* VGS(th) 1.0 V Vos = VGSJD = 250pA
Drain-Source Leakage loss 90 pA Vos = 24V, VGS = 0V
Current* 7.2 mA VDS = 24V, N/ss = 0V,
T,, = 125°C
Gate-Source Leakage |GSS +/- 100 nA I/ss = +/-12V
Current*
Total Gate Charge Qgsync 10.5 14 VDS<100mV,
Synch FET* VGS = 5V, ID = 7A
Total Gate Charge Qgcom 12 17 V03: 16V,
Control FET* VGS = 5V, ID = 7A
Pre-Vth As, 2.1 VDS = 16V, ID = 7A
Gate-Source Charge
Post-Vth 0952 0.76 nC
Gate-Source Charge
Gate to Drain Charge di 2.9
Switch Charge* QSW 3.66 5.2
(0952 + 0911)
Output Charge' Qoss 17.6 21.6 VDS = 16V, I/ss = 0
Gate Resistance R, 1.2 Q
Schottky Diode & Body Diode Ratings and Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Voltage v, 0.54 V T,-- 25°C, lg = 3A, v, =0Vg
0.43 T,-- 125°C, Is = 3A, I/ss =OV©
Reverse Recovery Time trr 36 ns T,-- 25°C, IS = 7.0A, VDS = 16V
Reverse Recovery Charge On 41 nC di/dt = 100A/ps
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
T Repetitive rating; pulse width limited by max.junction temperature.
© Pulse width f 300 ps; duty cycle f 2%.
© When mounted on 1 inch square copper board, t < 10 sec.
© 50% Duty Cycle, Rectangular
* Devices are 100% tested to these parameters.
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