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IRF7807D1-IRF7807D1TR
30V FETKY
International PD- 93761
TOR Rectifier IRF7807D'l
FETKYTM MOSFET I SCHOTTKY DIODE
. Co-Pack N-channel HEXFET© Power MOSFET
and Schottky Diode AIS E
. Ideal for Synchronous Rectihers in DC-DC AIS =
Converters Up to 5A Output AIS II
. Low Conduction Losses
. Low Switching Losses G =
. Low Vf Schottky Rectifier SO-8 Top View
Description
The FETKW" family of Co-Pack HEXFET®MOSFETS and
Schottky diodes offers the designer an innovative, board
space saving solution for switching regulator and power
. . Device Features (Max Values)
management applications. HEXFET power MOSFETs
utilize advanced processing techniques to achieve IRF7807D1
extremely low on-resistance per silicon area. Combining I/rss 30V
this technology with International Rectifer's low forward Rosmm 25m§2
drop Schottky rectihers results in an extremely efficient Qu 14nC
device suitable for use in a wide variety of portable st 5.2nC
electronics applications. qu 18.4nC
The SO-8 has been modified through a customized
leadframe for enhanced thermal characteristics.The SO-
8 package is designed for vapor phase, infrared or wave
soldering techniques.
Absolute Maximum Ratings
Parameter Symbol Max. Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS :12
Continuous Drain or Source 25°C l,, 8.3
Current (VGS 2 4.5V) 70°C 6.6 A
Pulsed Drain Current© L, 66
Power Dissipation 25°C PD 2.5 W
70°C 1.6
Schottky and Body Diode 25''C l,, (AV) 3.5 A
Average ForwardCurrent© 70°C 2.2
Junction & Storage Temperature Range T J,TSTG -55 to 150 "C
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient Ra, 50 °C/W
1
11/8/99
IRF7807D1 International
TOR iiectifier
Electrical Characteristics
Parameter Min Typ Max Units Conditions
Drain-to-Source V(BR)DSS 30 V VGS = 0V, ID = 250pA
Breakdown Voltage*
Static Drain-Source RDS(on) 17 25 mn VGS = 4.5V, ID = 7A©
on Resistance*
Gate Threshold Voltage* Vss(th) 1.0 V Vos = VGSJD = 250pA
Drain-Source Leakage loss 90 pA Vos = 24V, I/ss = 0V
Current' 7.2 mA VDS = 24V, VGS = 0V,
T, = 125°C
Gate-Source Leakage |GSS +/- 100 nA VGS = +/-12V
Current*
Total Gate Charge QgSync 10.5 14 VDS<100mV,
Synch FET* VGS = 5V, ID = 7A
Total Gate Charge Qgcom 12 17 Vos-- 16V,
Control FET* VGS = 5V, ID = 7A
Pre-N/th Qgs1 2.1 Vos = 16V, ID = 7A
Gate-Source Charge
Post-Vth Qgsz 0.76 nC
Gate-Source Charge
Gate to Drain Charge di 2.9
Switch Charge' st 3.66 5.2
(Qgsz + di)
Output Charge' Qoss 15.3 18.4 Vos = 16V, VGs = 0
Gate Resistance R, 1.2 Q
Schottky Diode & Body Diode Ratings and Characteristics
Parameter Min Typ Max Units Conditions
Diode Forward Voltage Va, 0.5 V T,-- 25°C,| = 1A, VGS=0V©
0.39 Ti: 125°C, IS = 1A, VGS =OV©
Reverse Recovery Time trr 51 ns T,-- 25°C, Is = 7.0A, VDS = 16V
Reverse Recovery Charge On 48 nC di/dt = 100A/ps
Forward Turn-On Time ton Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
C) Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 300 us; duty cycle 3 2%.
© When mounted on 1 inch square copper board, t < 10 sec.
G) 50% Duty Cycle, Rectangular
* Devices are 100% tested to these parameters.
2
