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IRF7807-IRF7807A-IRF7807ATR-IRF7807TR-IRF7807-TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
PD - 91747C
lRF7807/IRF7807A
HEXFET6 Chip-Set for DC-DC Converters
. N Channel Application Specific MOSFETs
. Ideal for Mob1le DC-DC Converters S D11 8 :13: D
. Low Conduction Losses '
. Low Switching Losses t _ "J. Ali S 312 Cr-,-, 7333 D
_ V 2il 'i. T, EU
a f s D13 5 II: D
Description i'sj')jc;ij1ib'c'''"
These new devices employ advanced HEXFET Power G E‘ 5 ID D
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The SO-8 Top View
reduced conduction and switching losses make them
ideal for high efrciency DC-DC Converters that power
the latest generation of mobile microprocessors. Device Features
A pair of IRF7807 devices provides the best cost/ V ds Rigs; |RF7380C
giggyance solution for system voltages, such as 3.3V R ds (on) 25m§2 25mn
. Qg 17nC 17nC
st 5.2nC
Qoss 16.8nC 16.8nC
Absolute Maximum Ratings
Parameter Symbol IRF7807 1 IRF7807A Units
Drain-Source Voltage VDS 30 V
Gate-Source Voltage VGS t12
Continuous Drain or Source 25°C r, 8.3 8.3 A
Current (VGS 2 4.5V) 70°C 6.6 6.6
Pulsed Drain Current© L, 66 66
Power Dissipation 25°C PD 2.5 W
70°C 1.6
Junction & Storage Temperature Range T J' TSTG -55 to 150 ''C
Continuous Source Current (Body Diode)© ls 2.5 2.5 A
Pulsed source Current Iss, 66 66
Thermal Resistance
Parameter Max. Units
Maximum Junction-to-Ambient® R,,, 50 °CNV
1
10/10/00
IRF7807/IRF7807A International
TOR iilectifier
Electrical Characteristics IRF7807 IRF7807A
Parameter Min Typ Max Min Typ Max Units Conditions
Drain-to-Source V(stss 30 - - 30 - - V VGS = 0V, ID = 250PA
Breakdown Voltage'
Static Drain-Source RDS(on) 17 25 17 25 mn VGS = 4.5V, ID = 7A©
on Resistance'
Gate Threshold Voltage' VGS(th) 1.0 1.0 V VDS = VGS, r, = 250pA
Drain-Source Leakage |DSS 30 30 pA VDS = 24V, VGS = 0
Current 150 150 Vos = 24V, I/ss = 0,
T] = 100°C
Gate-Source Leakage |GSS i100 t100 nA VGS = i12V
Current*
Total Gate Charge* Q, 12 17 12 17 VGS = 5V, ID = 7A
Pre-Vth Q951 2.1 2.1 Vos = 16V, ID = 7A
Gate-Source Charge
Post-N/th As, 0.76 0.76 nC
Gate-Source Charge
Gate to Drain Charge di 2.9 2.9
Switch Charge* Qsw 3.66 5.2 3.66
(0952 + di)
Output Charge* Qass 14 16.8 14 16.8 Vos = 16V, VGS = 0
Gate Resistance R, 1.2 1.2 f2
Turn-on Delay Time t jon) 12 12 VDD = 16V
Rise Time t, 17 17 ns ID = 7A
Turn-off Delay Time t d (off) 25 25 R, = 2n
Fall Time t, 6 6 VGS = 4.5V
Resistive Load
Source-Drain Rating & Characteristics
Parameter Min Typ Max Min Typ Max Units Conditions
Diode Forward Va, 1.2 1.2 V IS = 7AO, VGS = 0V
Voltage'
Reverse Recovery Qrr 80 80 nC di/dt = 700A/ps
Charge© VDs = 16V, I/ss = 0V, Is = 7A
Reverse Recovery Om) 50 50 di/dt = 700/Vps
Charge (with Parallel (with 1OBQ040)
Schotkky)© VDS = 16V, VGS = 0V, IS = 7A
Notes:
C) Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width 5 300 us; duty cycle f 2%.
© When mounted on 1 inch square copper board, t < 10 sec.
© Typ = measured - Qus
Devices are 100% tessted to these parameters.
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