IRF7805ZTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Point-of-Load6.8m
IRF7805ZTRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
a:io:RIectifier
Applications
0 High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
PD- 96011A
lRF7805ZPbF
HEXFET© Power MOSFET
Vnss RDS(on) max 09 (typ0
30V 6.8mf2@Vas = 10V 18nC
Computing Systems.
0 Lead-Free
. s EED‘ B D
Benefits 2 7
S CU] B CD] D
q Very Low RDS(on) at 4.5V l/ss 3 m i
o UItra-Low Gate Impedance s m m D
o Fully Characterized Avalanche Voltage G 3'34 5m D
and Current Top View SO-8
q 100% tested for Rg
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage * 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 16
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 12 A
IDM Pulsed Drain Current (D 120
PD @TA = 2500 Power Dissipation © 2.5 W
PD ©T, = 70°C Power Dissipation (42) 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead © - 20 °C/W
ROJA Junction-to-Ambient ©S _ 50
Notes C) through s are on page 10
1
06/30/05
IRF7805ZPbF International
TOR Rectifier
Static © T,, = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Vss = 0V, ID = 250pA
ABI/rss/AT: Breakdown Voltage Temp. Coefficient - 0.023 - V/°C Reference to 25°C, lo = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 5.5 6.8 mg Vas = 10V, ID = 16A ©
- 7.0 8.7 Vas = 4.5V, ID = 13A ©
VSS(th) Gate Threshold Voltage 1.35 - 2.25 V Vos = Vas, ID = 250pA
AVGS(th) Gate Threshold Voltage Coefficient - - 4.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- - 150 Vos = 24V, Vss = OV, T: = 125°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 20V
Gate-to-Source Reverse Leakage -- -- -100 Vss = -20V
gfs Forward Transconductance 64 -- -- S Vos = 15V, ID = 12A
q, Total Gate Charge - 18 27
0951 Pre-Vth Gate-to-Source Charge - 4.7 - Vos = 15V
0952 Post-Vth Gate-to-Source Charge - 1.6 - nC Vas = 4.5V
di Gate-to-Drain Charge - 6.2 - ID = 12A
ngdr Gate Charge Overdrive - 5.5 - See Fig. 16
st Switch Charge (0952 + the) - 7.8 _
Qoss Output Charge - IO - nC Vos = 16V, Vas = 0V
Rs Gate Resistance -- 1.0 2.1 Q
td(on) Turn-On Delay Time - 11 - VDD = 15V, Vss = 4.5V co
t, Rise Time - 10 - ID = 12A
tam) Turn-Off Delay Time -- 14 -- ns Clamped Inductive Load
t, Fall Time -- 3.7 --
Ciss Input Capacitance - 2080 - Vss = 0V
Coss Output Capacitance - 480 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © _ 72 mJ
|AR Avalanche Current OD _ 12 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol L)
(Body Diode) A showing the L,-,
ISM Pulsed Source Current - - 120 integral reverse G CLI
(Body Diode) CD p-n junction diode. e
Vso Diode Forward Voltage - - 1.0 V TJ = 25°C, Is = 12A, VGS = 0V ©
trr Reverse Recovery Time - 29 44 ns TJ = 25°C, IF = 12A, VDD = 15V
a,, Reverse Recovery Charge -- 20 30 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligib e (turn-on is dominated by LS+LD)
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