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IRF7805ZPBF
High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.
International
a:aRRectifier
Applications
. High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
PD- 96011A
llRF7805ZPbF
HEXFET© Power MOSFET
VDss RDS(on) max tlg (typ0
30V 6.8mQ@VGS=1OV 18nC
o Lead-Free
Benefits 77 7 T
0 Very Low RDS(on) at 4.5V I/as 6 T
o Ultra-Low Gate Impedance ”"3
0 Fully Characterized Avalanche Voltage SLLL D
and Current Top View SO-8
. 100% tested for Rg
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 16
ID @ TA = 70°C Continuous Drain Current, Veg © 10V 12 A
IDM Pulsed Drain Current C) 120
PD @TA = 25°C Power Dissipation Ci) 2.5 W
Po ©T, = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 °C
TSTS Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rom. Junction-to-Drain Lead (S) - 20 °C/W
ROJA Junction-to-Ambient (9C9 _ 50
Notes C) through S are on page 10
06/30/05
IRF7805ZPbF International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - v Vss = OV, ID = 250pA
ABI/rss/AT: Breakdown Voltage Temp. Coefficient - 0.023 - VPC Reference to 25°C, ID = 1mA
Roswn) Static Drain-to-Source On-Resistance - 5.5 6.8 mg Vss = 10V, ID = 16A ©
- 7.0 8.7 VGS = 4.5V, ID = 13A ©
VGS(1h) Gate Threshold Voltage 1.35 - 2.25 V Vos = Vss, ID = 250PA
AVGS(th) Gate Threshold Voltage Coefficient - - 4.7 -- mV/°C
loss Drain-to-Source Leakage Current -- -- 1.0 pA Vos = 24V, Vss = 0V
-- -- 150 Vos = 24V, Vss = OV, T, = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/ss = 20V
Gate-to-Source Reverse Leakage - - -100 Veg = -20V
gfs Forward Transconductance 64 - - S Vos = 15V, ID = 12A
Qg Total Gate Charge - 18 27
0951 Pre-Vth Gate-to-Source Charge - 4.7 - VDS = 15V
Qgsz Post-Vth Gate-to-Source Charge - 1.6 - nC l/ss = 4.5V
09:: Gate-to-Drain Charge - 6.2 - ID = 12A
ngdr Gate Charge Overdrive - 5.5 - See Fig. 16
a, Switch Charge (0952 + di) _ 7.8 _
Qoss Output Charge - 10 -- nC Vos = 16V, Vss = 0V
Rs Gate Resistance - 1.0 2.1 Q
tam) Turn-On Delay Time -- 11 - VDD = 15V, Vss = 4.5V OD
t, Rise Time - 10 - ID = 12A
tam) Turn-Off Delay Time - 14 - ns Clamped Inductive Load
tr Fall Time - 3.7 -
Ciss Input Capacitance - 2080 - Vas = 0V
Coss Output Capacitance - 480 - pF I/ross = 15V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy Q) - 72 mJ
|AR Avalanche Current OD - 12 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the Lt
ISM Pulsed Source Current - - 120 integral reverse 6 T,
(Body Diode) CD p-n junction diode. R
Vso Diode Forward Voltage -- -- 1.0 V TJ = 25°C, IS = 12A, VGs = 0V oo
t, Reverse Recovery Time - 29 44 ns TJ = 25°C, IF = 12A, Vor, = 15V
ar, Reverse Recovery Charge - 20 30 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by Ls+LD)
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