IRF7805ZTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S D Very Low R at 4.5V VDS(on) GS ..
IRF7805ZTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Point-of-Load6.8m
IRF7805Z-IRF7805ZTR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 94635B
International
TOR. Rectifier IRF7805Z
HEXFET*) Power MOSFET
Voss RDS(on) max 09 (typ0
Applications
. High Frequency Point-of-Load
Synchronous Buck Converter for
Applications in Networking &
Computing Systems.
. s nrp I a :13 D
Benefits 2 7
s :11 H :1] D
0 Very Low RDS(on) at 4.5V l/ss 3 Ir' 6
o Ultra-Low Gate Impedance ID LIL] D
0 Fully Characterized Avalanche Voltage G M4 s-UL] D
and Current Top View SO-8
. 100% Tested for He
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 1 20
ID @ TA = 25°C Continuous Drain Current, Vas @ 10V 16
ID @ TA = 70°C Continuous Drain Current, Vss @ 10V 12 A
IDM Pulsed Drain Current C) 120
PD @TA = 25°C Power Dissipation © 2.5 W
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 ''C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Rom. Junction-to-Drain Lead S - 20 °C/W
ROJA Junction-to-Ambient C4)(C9 - 50
Notes C) through s are on page 10
1
6/30/05
IRF7805Z
International
Static © To = 25°C (unless otherwise specified) TOR Rectifier
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage 30 - - V Ves = 0V, ID = 250PA
ABVDSS/ATJ Breakdown Voltage Temp. Coefficient - 0.023 - V/°C Reference to 25°C, ID = 1mA
RDS(on) Static Drain-to-Source On-Resistance - 5.5 6.8 m9 VGS = 10V, ID = 16A ©
- 7.0 8.7 I/ss = 4.5V, ID = 13A ©
VGSM Gate Threshold Voltage 1.35 - 2.25 V VDs = I/ss, ID = 250pA
Avesuh) Gate Threshold Voltage Coefficient - - 4.7 - mV/°C
loss Drain-to-Source Leakage Current - - 1.0 pA Vos = 24V, Vss = 0V
- - 150 VDS = 24V, l/ss = 0V, Tu = 125°C
less Gate-to-Source Forward Leakage - - 100 nA l/cis = 20V
Gate-to-Source Reverse Leakage - - -100 l/ss = -20V
gfs Forward Transconductance 64 - - S VDS = 15V, ID = 12A
Qg Total Gate Charge - 18 27
0951 Pre-Vth Gate-to-Source Charge - 4.7 - VDS = 15V
0952 Post-Vth Gate-to-Source Charge - 1.6 - nC l/ss = 4.5V
di Gate-to-Drain Charge - 6.2 - ID = 12A
ngd, Gate Charge Overdrive - 5.5 - See Fig. 16
QSW Switch Charge (0952 + di) - 7.8 -
Qoss Output Charge - 1O - nC VDS = 16V, I/ss = 0V
Rs Gate Resistance - 1.0 2.1 Q
tam”) Turn-On Delay Time - 11 - VDD = 15V, Vss = 4.5V ©
t, Rise Time - IO - ID =12A
tdwm Turn-Off Delay Time - 14 - ns Clamped Inductive Load
t, Fall Time - 3.7 -
Ciss Input Capacitance - 2080 - l/os = 0V
Coss Output Capacitance - 480 - pF 1/ros = 15V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz
Avalanche Characteristics
Parameter Typ. Max. Units
EAS Single Pulse Avalanche Energy © - 72 mJ
IAR Avalanche Current C) - 12 A
Diode Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current - - 3.1 MOSFET symbol D
(Body Diode) A showing the C,-a-,
ISM Pulsed Source Current - - 120 integral reverse G E
(Body Diode) C) p-n junction diode. 9
Vs, Diode Forward Voltage - - 1.0 V To = 25°C, ls =12A,VGS = 0V ©
tr, Reverse Recovery Time - 29 44 ns TJ = 25°C, IF = 12A, VDD = 15V
l Reverse Recovery Charge - 2O 30 nC di/dt = 100A/ps ©
ton Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
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