IRF7805TRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packagePD – 96031AIRF7805PbF®HEXFET Chip-Set for DC-DC Converters N Channel Application Specific MOSFETsA ..
IRF7805Z ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Point-of-Load6.8m@V = 10V30V 18nCGSSynchron ..
IRF7805ZPBF ,High Frequency Point-of-Load Synchronous Buck Converter for Applications in Networking & Computing Systems.Applications in Networking &Computing Systems.A Lead-FreeA18S DBenefits2 7S D Very Low R at 4.5 ..
IRF7805ZTR ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplications in Networking &Computing Systems.AA1 8S DBenefits2 7S D Very Low R at 4.5V VDS(on) GS ..
IRF7805ZTRPBF ,30V Single N-Channel HEXFET Power MOSFET in a SO-8 packageApplicationsV R maxQg (typ.)DSS DS(on) High Frequency Point-of-Load6.8m
IRF7805TRPBF
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
International
TOR Rectifier
. N Channel Application Specific MOSFETs
. Ideal for Mobile DC-DC Converters
. Low Conduction Losses
. Low Switching Losses
. Lead-Free
Description
This new device employs advanced HEXFET Power
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The
reduced conduction and switching losses make this
device ideal for high efficiency DC-DC Converters that
power the latest generation of mobile
microprocessors.
The IRF7805PbF offers maximum efficiency for
mobile CPU core DC-DC converters.
PD -96031A
llRF7805PbF
HEXFETO Chip-Set for DC-DC Converters
Top View
Absolute Maximum Ratings
Device Features
IRF7805PbF
I/os 30V
RDS(on)
st 11.5nC
Parameter
Drain-to-Source Voltage
Gate-to-Source Voltage
ID @ TA = 25°C
Continuous Drain Current, Vas @ 10V ©
ID @ TA = 70°C
Continuous Drain Current, Vss @ 10V ©
Pulsed Drain Current co
PD @TA = 25°C
Power Dissipation G)
PD @TA = 70°C
Power Dissipation ©
Linear Derating Factor
Operating Junction and
Storage Temperature Range
-55 to + 150
Thermal Res
istance
Parameter
Junction-to-Drain Lead s
Junction-to-Ambient OS
http://www.datas
heetcataloa.Com/
01/09/08
IRF7805PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage© 30 - _ V Vss = 0V, ID = 250pA
RDSM) Static Drain-to-Source On-Resistance@ _ 9.2 11 m9 Vss = 4.5V, ID = 7.0A ©
VGS(th) Gate Threshold Voltage © 1.0 _ 3.0 V Vos = Vss, ID = 250pA
loss Drain-to-Source Leakage Current - - 70 Vos = 30V, Ves = 0V
- --.- 10 pA Vos = 24V, Vss = 0V
- - 150 Vos = 24V, Vss = OV, T, = 100°C
less Gate-to-Source Forward Leakage - - 100 nA Vss = 12V
Gate-to-Source Reverse Leakage - - -1OO Vss = -12V
q, Total Gate Charge © - 22 31 Vas = 5.0V
Qgs1 Pre-Vth Gate-to-Source Charge - 3.7 - Vos = 16V
0952 Post-Vth Gate-to-Source Charge - 1.4 - nC ID = 7.0A
di Gate-to-Drain Charge - 6.8 -
st Switch Charge (Ogs2 + di) © _ 8.2 11.5
Qoss Output Charge © -- 3.0 3.6 nC I/rss = 16V, Vss = OV
Rs Gate Resistance 0.5 - 1.7 Q
td(on) Turn-On Delay Time - 16 --.- l/co = 16V, Vss = 4.5V ©
t, Rise Time - 2O - b = 7.0A
tam Turn-Off Delay Time - 38 - s Rs-- 20
t, Fall Time - 16 - Resistive Load
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current - - 2.5 MOSFET symbol D
(Body Diode) CD A showing the if
ISM Pulsed Source Current - - 106 integral reverse G
(Body Diode) p-n junction diode. a
Vso Diode Forward Voltage © - - 1.2 v T J = 25°C, Is = 7.0A, I/ss = OV
Qrr Reverse Recovery Charge G) - 88 - di/dt = 7OOA/ps
n VDs =16V,VGS = OV, IS = 7.0A
er(s) Reverse Recovery Charge - 55 - di/dt = 7OOA/ps (with 1OBQ040)
(with Parallel Schottky) G) nC VDS = 16V, VGS = 0V, ls = 7.0A
Notes:
OD Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width S 300 ps; duty cycle S 2%.
a When mounted on 1 inch square copper board, t < 10 sec.
6) Typ = measured - 0055
s R, is measured at T, of approximately 90°C.
© Devices are 100% tested to these parameters.
2
