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IRF7805Q-IRF7805QPBF-IRF7805QTRPBF
30V Single N-Channel HEXFET Power MOSFET in a Lead-Free SO-8 package
. ENDOFLIFE
International PD-96114C
TOR Rectifier IRF7805CIPbF
Advanced Process Technology
Ultra Low On-Resistance
N Channel MOSFET
Surface Mount
Available in Tape & Reel
150°C Operating Temperature
. Lead-Free
Description
TheseHEXFET® PowerMOSFET'sin package utilize SO-8 Top View
the lastest processing techniques to achieve
extremely low on-resistance per silicon area.
Additional features of these HEXFET Power Device Features
MOSFET's are a 150°C junction operating IRF7805Q
temperature, fast switching speed and improved
repetitive avalanche rating. These benefits combine Vos 30V
to make this design an extremely efficientand reliable RDs(on) 11mQ
device for use in a wide variety of applications. Qg 31nC
The efficient SO-8 package provides enhanced st 11.5nC
thermal characteristics making it ideal in a variety of .
power applications. This surface mount SO-8 can Qoss 36nC
dramatically reduce board space and is also available
in Tape & Reel.
Package Standard Pack EOL
Base part number Orderable part number T N .
ype Form Ouanmy once
Replacement Part Number
|RF78050TRPDF SO-8 Tape and Reel 4000 EOL 527 Pl hth E L nn m r nlR' w it for
IRF7805QPbF so-s Tube 95 EOL 529 guiins;e
|RF78050PbF
Absolute Maximum Ratings
Parameter Max. Units
VDS Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage t 12
ID @ T, = 25°C Continuous Drain Current, Ves @ 10V 13
ID @ TA = 70°C Continuous Drain Current, Ves @ 10V 10 A
IDM Pulsed Drain Current 0 100
Pn @TA = 25°C Power Dissipation © 2.5 W
Po @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
TJ Operating Junction and -55 to + 150 "C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
Fun, Junction-to-Drain Lead s - 20 °CAN
Ro, Junction-to-Ambient ©C0 50
1
08/19/14
EN D OF LIFE
IRF7805C)PbF
International
TOR Rectifier
Static © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVDSS Drain-to-Source Breakdown Voltage© 30 _ _ V Ves = 0V, lo = 250pA
Rosom Static Drain-to-Source On-ResistanCe© - 9.2 11 mn Ves = 4.5V, b = 7.0A ©
VGS(th) Gate Threshold Voltage © 1.0 _ 3.0 V Vos = Vas, ID = 250pA
loss Drain-to-Source Leakage Current - - 7O Vos = 30V, l/ss = 0V
- - 10 PA Vos = 24V, l/ss = 0V
- - 150 Vos = 24V, Vss = OV, T: = 100°C
less Gate-to-Source Forward Leakage -- -- 100 nA Vss = 12V
Gate-to-Source Reverse Leakage -- -- -100 Vss = -12V
09 Total Gate Charge -- 22 31 Vas = 5.0V
Qgs1 Pre-Vth Gate-to-Source Charge -- 3.7 -- Vos = 16V
0952 Post-Vth Gate-to-Source Charge - 1.4 - nC ID = 7.0A
di Gate-to-Drain Charge - 6.8 -
st Switch Charge (Q952 + di) - 8.2 11.5
Iss Output Charge - 3.0 3.6 nC Vos = 16V, I/ss = 0V
Re Gate Resistance 0.5 - 1.7 f2
tam) Turn-On Delay Time - 16 - VDD = 16V, Vas = 4.5V ©
t, Rise Time - 20 - ID = 7.0A
tdmm Turn-Off Delay Time - 38 - ns Re: 2n
tr Fall Time - 16 - Resistive Load
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current 2.5 MOSFET symbol D
(Body Diode) (D A showing the E
ISM Pulsed Source Current 106 integral reverse G
(_B.odyf2iode) p-_nlunction diode. e
Vso Diode Forward Voltage © -- -- 1.2 v T J = 25°C, ls = 7.0A, l/tss = ov
Qrr Reverse Recovery Charge Q0 88 di/dt = 700A/ps
- - ns Vos =16V, VGS = 0V, ls = 7.0A
er(s) Reverse Recovery Charge 55 di/dt = 700A/ps (with 10BQ040)
(with Parallel Schottky) © - - nC Vos = 16V, VGS = OV, Is = 7.0A
Notes:
(D Repetitive rating; pulse width limited by max. junction temperature.
© Pulse width 5 300 ps; duty cycle 3 2%.
© When mounted on 1 inch square copper board, t < 10 sec.
(9 Typ = measured - QOSS
S He is measured at T, of approximately 90°C.
© Devices are 100% tested to these parameters.
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