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IRF7805-IRF7805A-IRF7805ATR-IRF7805TR
30V Single N-Channel HEXFET Power MOSFET in a SO-8 package
PD - 91746E
lRF7805
HEXFET® Chip-Set for DC-DC Converters
International
TOR Rectifier
. N Channel Application Specific MOSFETs
. Ideal for Mobile DC-DC Converters ' a 3]] C)
. Low Conduction Losses 7
. Low Switching Losses 333 D
. . 5 II: D
Description
This new device employs advanced HEXFET Power 5 T17 D
MOSFET technology to achieve an unprecedented
balance of on-resistance and gate charge. The SO-8 Top View
reduced conduction and switching losses make this
device ideal for high efficiency DC-DC Converters that
power the latest generation of mobile Device Features
microprocessors. IRF7805
The IRF7805 offers maximum efficiency for mobile Vos; 30V
CPU core DC-DC converters. RDS(on) 11mg
09 31nC
st 11.5nC
Qoss 36nC
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-to-Source Voltage 30 V
VGS Gate-to-Source Voltage 4; 12
ID @ TA = 25°C Continuous Drain Current, Vss @ 10V oo 13
ID @ TA = 70°C Continuous Drain Current, l/ss @ 10V © 10 A
IDM Pulsed Drain Current OD 100
PD @TA = 25°C Power Dissipation © 2.5 w
PD @TA = 70°C Power Dissipation © 1.6
Linear Derating Factor 0.02 W/°C
To Operating Junction and -55 to + 150 °C
TSTG Storage Temperature Range
Thermal Resistance
Parameter Typ. Max. Units
ROJL Junction-to-Drain Lead s - 20 °CNV
ROJA Junction-to-Ambient ©© - 50
1
2/14/07
IRF7805
International
TOR Rectifier
Static © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
BVoss Drain-to-Source Breakdown Voltage© 30 _ - V Vas = 0V, lo = 250pA
RDS(on) Static Drain-to-Source On-Resistance© _ 9.2 11 m9 I/ss = 4.5V, ID = 7.0A ©
VGS(th) Gate Threshold Voltage © 1.0 _ 3.0 V VDS = Vss, ID = 250PA
loss Drain-to-Source Leakage Current -- -- 70 V95 = 30V, Vss = 0V
-- -- 10 pA I/rss = 24V, l/ss = 0V
- --.- 150 Vos = 24V, Vss = 0V, T, = 100°C
less Gate-to-Source Forward Leakage - - 100 A l/ss = 12V
Gate-to-Source Reverse Leakage - - -100 l/ss = -12V
Qg Total Gate Charge @ - 22 31 Ves = 5.0V
Qgs1 Pre-Vth Gate-to-Source Charge - 3.7 - Vos = 16V
0952 Post-Vth Gate-to-Source Charge - 1.4 - nC b = 7.0A
di Gate-to-Drain Charge - 6.8 -
st Switch Charge (0952 + Ad) © - 8.2 11 .5
0055 Output Charge © - 3.0 3.6 nC Vos = 16V, VGS = 0V
Rs Gate Resistance 0.5 _ 1.7 Q
td(on) Turn-On Delay Time - 16 - VDD = 16V, Vas = 4.5V ©
t, Rise Time -- 2O -- ID = 7.0A
td(off) Turn-Off Delay Time - 38 -- ns Rs-- 2Q
t, Fall Time - 16 - Resistive Load
Diode Characteristics
Parameter Min Typ. Max. Units Conditions
ls Continuous Source Current 2.5 MOSFET symbol C)
(Body Diode) G A showing the E
ISM Pulsed Source Current 106 integral reverse G
(Body Diode) p-n junction diode. a
l/so Diode Forward Voltage (5) - _ 1.2 V TJ = 25''C, ls = 7.0A, VGS = 0V
Qrr Reverse Recovery Charge Q4) 88 di/dt = 700A/ps
- - ns VDS =16V,Vas = OV, IS = 7.0A
er(s) Reverse Recovery Charge 55 di/dt = 7OOA/ps (with 1OBQ040)
. - - nC
(with Parallel Schottky) (9 VDS = 16V, Vas = 0V, ls = 7.0A
Notes:
Repetitive rating; pulse width limited by max. junction temperature.
Pulse width 5 300 ps; duty cycle s: 2%.
When mounted on 1 inch square copper board, t < 10 sec.
R, is measured at T, of approximately 90°C.
(9 Typ = measured - Q
Devices are 100% tested to these parameters.
