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IRF7757-IRF7757TR
20V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
araRRectifier
PD - 94174
IRF7757
HEXFET© Power MOSFET
o Ultra Low On-Resistance VDss RDS(on) max (mg) ID
0 Dual N-Channel MOSFET -
20V 35@Vss - 4.5V 4.8A
0 Very Small SOIC Package 40@V - 2 5V 3 8A
. Low Profile (< 1.2mm) GS . .
q Available in Tape & Reel
. Common Drain Configuration
Description
HEXFETQ Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit, 2-'-% -EI
combined with the ruggedized device design, that Inter- E I TI
national Rectifer is well known for, provides the de- iii-F-ei');) -z]
signer with an extremely efMient and reliable device I: I E
for battery and load management. 1: S] 8= D
2= Gl 7= D
The TSSOP-8 package has 45% less footprint area than 3 = S2 6= D
the standard SO-8. This makes the TSSOP-8 an ideal 4= G2 5= D TSSOP-8
device for applications where printed circuit board space
is at a premium. The low proGs (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage 20 V
ID @ TA = 25°C Continuous Drain Current, VGs @ 4.5V 4.8
ID @ TA-- 70°C Continuous Drain Current, VGS © 4.5V 3.9 A
IDM Pulsed Drain Current C) 19
Pro @TA = 25°C Power Dissipation © 1.2 W
Po @TA = 70°C Power Dissipation© 0.76
Linear Derating Factor 9.5 mW/°C
VGS Gate-to-Source Voltage * 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 CC
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 105 ''CAIV
1
05/03/01
IRF7757
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 20 - - V VGs = 0V, ID = 250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.013 - V/°C Reference to 25°C, ID = 1mA
Rrosom Static Drain-to-Source On-Resistance _- _- :3 mn x2: : 22$ :3 : :3: "ji,)
VGS(th) Gate Threshold Voltage 0.60 - 1.2 V Vros = VGs, ID = 250pA
gfs Forward Transconductance 11 - - S Vos = 10V, ID = 4.8A
loss Drain-to-Source Leakage Current : : 12: PA VS: : 12$ V2: : g, TJ = 70°C
less Gate-to-Source Forward Leakage - - 100 n A VGS = 12V
Gate-to-Source Reverse Leakage - - -100 VGS = -12V
09 Total Gate Charge - 15 23 lo = 4.8A
Qgs Gate-to-Source Charge - 2.5 - nC Vros = 16V
di Gate-to-Drain ("Miller") Charge - 4.8 - VGs = 4.5V
tam) Turn-On Delay Time - 9.5 - VDD = 10V ©
tr Rise Time - 9.2 - ns ID = 1.0A
td(off) Turn-Off Delay Time - 36 - Rs = 6.29
tr Fall Time - 14 - VGS = 4.5V
Ciss Input Capacitance - 1340 - VGS = 0V
Coss Output Capacitance - 180 - pF Vos = 15V
Crss Reverse Transfer Capacitance - 132 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - 1.2 showing the
ISM Pulsed Source Current - _ 19 integral reverse G
(Body Diode) C) p-n junction diode. s
I/so Diode Forward Voltage - - 1.2 V To = 25°C, Is = 1.2A, VGs = 0V ©
trr Reverse Recovery Time - 20 30 ns To = 25°C, IF = 1.2A
Qrr Reverse Recovery Charge - 10 15 nC di/dt = 100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width f 400ps; duty cycle s 2%.
Surface mounted on 1 in square Cu board
