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IRF7756-IRF7756TR
-12V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD -94159A
TOR Rectifier IRF7756
HEXFET6 Power MOSFET
o Ultra Low On-Resistance
Voss RDS(on) max In
o Dual P-Channel MOSFET -
-12V 0.040@VGS - -4.5V 14.3A
o Very Small SOIC Package 0 058 V - 2 5V 3 4A
a Low Profile (< 1.2mm) . @ GS - - . i .
0 Available in Tape & Reel 0.087@Vss = -1.8V A.2A
Description
HEXFET6 Power MOSFETs from International RecWer IT CEI
utilize advanced processing techniques to achieve ex- ' ZI
tremely low on-resistance per silicon area. This benefit, I: El
combined with the ruggedized device design, that Inter- IE El
nationalRecWer iswellknown for, providesthedesigner 1: DI 8= D2
with an extremely efficient and reliable device for 2= Sl 7= s2
3= Si 6= 82
battery and load management. 4= G] 5= G2 TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-Source Voltage -12 V
ID @ TA = 25°C Continuous Drain Current, Ves @ -4.5V -4.3
ID @ TA = 70°C Continuous Drain Current, VGs @ -4.5V -3.5 A
loss Pulsed Drain Current© -17
Pro @TA = 25°C Maximum Power Dissipation® 1.0 W
PD @TA = 70''C Maximum Power Dissipation© O.64 W
Linear Derating Factor 8.0 mW/°C
VGS Gate-to-Source Voltage 18.0 V
T J , TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 125 "CA/ll
1
3/17/04
IRF7756 International
TOR Rectifier
Electrical Characteristics © T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V VGS = 0V, ID = -250pA
AV(BR)DsS/ATJ Breakdown Voltage Temp. Coemcient - -0.006 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0.040 Was = -4.5V, ID = M.3A ©
- - 0.058 Q VGS = -2.5v, ID = -3.4A ©
- - 0.087 Ves = -1.8V, ID = -2.2A ©
Vegan) Gate Threshold Voltage -0.4 - -0.9 V Vos = Vss, ID = -250pA
gfs Forward Transconductance 13 - - S VDs = -10V, ID = -4.3A
loss Drain-to-Source Leakage Current - - -1.0 pA VDS = -9.6V, VGS = 0V
- - -25 I/os = -9.6V, VGS = 0V, TJ = 70''C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -8.0V
Gate-to-Source Reverse Leakage - - 100 VGs = 8.0V
09 Total Gate Charge - 12 18 lo = -4.3A
Qgs Gate-to-Source Charge - 1.8 2.7 nC Vos = -6.0V
di Gate-to-Drain ("Miller") Charge - 2.9 4.4 VGS = -4.5V
td(on) Turn-On Delay Time - 12 - ns We; = -6.0V,
tr Rise Time - 18 - ID = -1.0A
tam) Turn-Off Delay Time - 160 - Rs = 6.09
tr Fall Time - 170 - VGS = -4.5V ©
Ciss Input Capacitance - 1400 - VGS = 0V
Coss Output Capacitance - 310 - pF Vos = -10V
Crss Reverse Transfer Capacitance - 240 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -17 p-n junction diode. s
I/so Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.0A, VGs = 0V ©
trr Reverse Recovery Time - 35 53 ns To = 25°C, IF = -1.0A
Qrr Reverse Recovery Charge - 20 30 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by co Surface mounted on FR-4 board, ts 10sec.
max. junction temperature.
© Pulse width s: 400ps; duty cycle s 2%.
2
