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IRF7755
-20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD -93995A
International
TOR Rectifier IRF7755
HEXFET© Power MOSFET
VDss RDS(on) max In
-2ov 51 mf2@Vss = -4.5v -3.7A
86mf2@Vss = -2.5v -2.8A
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Description
HEXFETO Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier iswell known for, providesthedesigner 1: D] a
with an extremely efficient and reliable device for 2= Sl 7
3= Si 6= S2
battery and load management. 4-- Gl 5--
FIFIFIFI
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -20 V
In @ TA = 25°C Continuous Drain Current, Vss @ -4.5V -3.9
In @ TA = 70°C Continuous Drain Current, l/ss @ -4.5V -3.1 A
IDM Pulsed Drain CurrentCD -15
Pro @TA = 25°C Maximum Power Dissipation© 1 W
PD @TA = 70°C Maximum Power Dissipation© 0.64 W
Linear Derating Factor 0.01 Wl°C
VGs Gate-to-Source Voltage 120 V
T J , TSTG Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient) 125 ''CIVV
1
4/9/01
IRF7755
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.011 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - 35.3 51 mn VGS = -4.5V, ID = -3.7A ©
- 44.3 86 VGS = -2.5V, ID = -2.8A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 7.0 - - S Vos = -10V, ID = -3.7A
loss Drain-to-Source Leakage Current - - -15 pA N/ns = -16V, VGS = 0V (2
- - -25 V93 = -16V, Vss = 0V, Tu = 70 C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
Gate-to-Source Reverse Leakage - - 100 VGs = 12V
% Total Gate Charge - 11 17 ID = -3.7A
Qgs Gate-to-Source Charge - 2.1 - nC Vros = -161/
di Gate-to-Drain ("Miller") Charge - 3.5 - VGS = -4.5V
td(on) Turn-On Delay Time - 9 14 Va, = -10V, VGS = -4.5V
tr Rise Time - 13 20 ns ID = -1.0A
td(off) Turn-Off Delay Time - 89 133 Rs = 6.09
tf Fall Time - 61 92 RD = lon ©
Ciss Input Capacitance - 1090 - VGs = 0V
Coss Output Capacitance - 182 - pF VDS = -15V
Crss Reverse Transfer Capacitance - 124 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.0 showing the
ISM Pulsed Source Current - - -15 A integral reverse G
(Body Diode) (D p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.0A, VGs = 0V ©
trr Reverse Recovery Time - 55 82 ns To = 25°C, IF = -1.0A
Qrr Reverse Recovery Charge - 29 43 nC di/dt = -1OOA/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width I 300ps; duty cycle 3 2%.
© When mounted on 1 inch square copper board, t < 10sec.
