IRF7754 ,-12V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 packagePD - 94224IRF7754®HEXFET Power MOSFET Ultra Low On-ResistanceV R max IDSS DS(on) D P-Channel MO ..
IRF7754TRPBF , HEXFET® Power MOSFET
IRF7754TRPBF , HEXFET® Power MOSFET
IRF7755 ,-20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 packageapplications where printed circuit board spaceis at a premium. The low profile (<1.2mm) allows it t ..
IRF7756 ,-12V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 packageapplications where printed circuit board spaceis at a premium. The low profile (<1.1mm) allows it t ..
IRF7756TR ,-12V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package IRF7756®HEXFET Power MOSFET Ultra Low On-ResistanceV R max IDSS DS(on) D Dual P-Chann ..
ISL43140IR ,Low-Voltage/ Single and Dual Supply/ High Performance/ Quad SPST/ Analog SwitchesApplicationsTable 1 summarizes the performance of this family.• Battery Powered, Handheld, and Port ..
ISL43141IB ,Low-Voltage/ Single and Dual Supply/ High Performance/ Quad SPST/ Analog Switchesapplications include battery powered equipment that • ON Resistance (R ) . . . . . . . . . . . . . ..
ISL43141IR ,Low-Voltage/ Single and Dual Supply/ High Performance/ Quad SPST/ Analog SwitchesApplicationsTable 1 summarizes the performance of this family.• Battery Powered, Handheld, and Port ..
ISL43141IV ,Low-Voltage/ Single and Dual Supply/ High Performance/ Quad SPST/ Analog SwitchesFeaturesHigh Performance, Quad SPST, Analog • Fully Specified at ±5V, 12V, 5V, and 3V Supplies for ..
ISL43141IVZ , Low-Voltage, Single and Dual Supply, High Performance, Quad SPST, Analog Switches
ISL43142IR ,Low-Voltage/ Single and Dual Supply/ High Performance/ Quad SPST/ Analog SwitchesISL43140, ISL43141, ISL43142®Data Sheet November 2002 FN6032Low-Voltage, Single and Dual Supply,
IRF7754
-12V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD - 94224
International
TOR Rectifier IRF7754
HEXFET© Power MOSFET
0 Ultra Low On-Resistance V R
. P-Channel MOSFET 1023; 25 1i'lCl,l - 4 5V 5 'l,
0 Very Small SOIC Package - m @ GS - - . - .
. Low Profile (< 1.2mm) 34mf2@Vss = -2.51/ M.6A
o Available in Tape & Reel 49mf2@Vss = -1.8V -3.9A
Description
HEXFETO Power MOSFETs from International Rectifier I: El
utilize advanced processing techniques to achieve ex- ' Tl
tremely low on-resistance per silicon area. This benefit, I: El
combined with the ruggedized device design, that Inter- IE El
national Rectifier iswellknown for, providesthedesigner 1: L)] 8= D2
with an extremely efficient and reliable device for 2= Sl 7= S2
3= Si 6= S2
battery and load management. 4= Gl 5-- G2 TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to ft
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -12 V
In @ TA = 25°C Continuous Drain Current, VGs @ -4.5V -5.5
In @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -4.4 A
IDM Pulsed Drain CurrentCD -22
Pro @TA = 25°C Maximum Power Dissipation© 1 W
PD @TA = 70°C Maximum Power Dissipation© 0.64 W
Linear Derating Factor 0.01 W/°C
VGs Gate-to-Source Voltage 18 V
T J , TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 125 "C/W
1
05/14/01
IRF7754 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -12 - - V N/ss = 0V, ID = -250PA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.008 - V/°C Reference to 25''C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 25 VGS = -4.5V, ID = -5.4A ©
- - 34 mn VGs = -2.5V, ID = -4.6A ©
- - 49 Ffas = -1.8V, ID = -3.9A C)
VGS(th) Gate Threshold Voltage -0.4 - -0.9 V Vos = Was, ID = -250PA
Ts Forward Transconductance 16 - - S Vos = -10V, ID = -5.4A
loss Drain-to-Source Leakage Current - - -1.0 y A Vos = -9.6V, VGS = 0V
- - -25 Vos = -9.6V, VGS = 0V, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -8V
Gate-to-Source Reverse Leakage - - 100 VGS = 8V
Qg Total Gate Charge - 22 - ID = -5.4A
Qgs Gate-to-Source Charge - 3.9 - nC VDs = -6V
di Gate-to-Drain ("Miller") Charge - 4.8 - VGS = -4.51/ ©
td(on) Turn-On Delay Time - 9.8 14.7 ns VDD = -6V, VGS = -4.5V
tr Rise Time - 18 27 lo = -1.0A
tum) Turn-Off Delay Time - 267 401 Ro = 69
tf Fall Time - 191 287 Rs = 69 ©
Ciss Input Capacitance - 1984 - VGS = 0V
Coss Output Capacitance - 618 - pF Vos = RN
Crss Reverse Transfer Capacitance - 385 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.0 showing the
ISM Pulsed Source Current - - -22 A integral reverse G
(Body Diode) OD p-n junction diode. s
Vso Diode FonNard Voltage - - -1.2 V To = 25°C, Is = -1.0A, Vss = 0V ©
trr Reverse Recovery Time - 39 59 ns To = 25''C, IF = -1.0A
Qrr Reverse Recovery Charge - 27 41 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
© Pulse width I 400ps; duty cycle 3 2%.
2
