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IRF7752
30V Dual N-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
:rartRectifier
Ultra Low On-Resistance
PD -94030A
IRF7752
HEXFET© Power MOSFET
. Dual N-Channel MOSFET 2’3,” 0 ligpt. "ER 4'6DA
0 Very Small SOIC Package ' @ GS .
. Low Profile (< 1.1mm) 0.036@Vss = 4.5V 3.9A
0 Available in Tape & Reel
Description
HEXFETO power MOSFETs from International Rectifier CE El
utilize advanced processing teshniques to achieve ex- I: ZI
tremely low fyt.resistareper. Sillcpn ares. This benefit, I: El
combined with the ruggedized device design , that Inter-
national Rectifier is well known for, provides thedesigner [E El
with an extremely efficient and reliable device for use 1: D1 8= D2
in battery and load management. i: :1 Z: :3
4 = Gl 5 = G2 TSSOP-8
The TSSOP-8 package, has 45% less footprint area of the
standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a
premium.
The low profile (<1 .1 mm) of the TSSOP-8 will allow it to fit
easily into extremely thin application environments such
as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage 30 V
ID @ TC = 25''C Continuous Drain Current, N/ss @ 10V 14.6
ID @ Tc = 70°C Continuous Drain Current, VGS @ 10V 13.7 A
IDM Pulsed Drain Current C) 137
Po @TA = 25°C Power Dissipation 1.0 W
Po @TA = 70°C Power Dissipation 0.64
Linear Derating Factor 8.0 mW/°C
VGS Gate-to-Source Voltage , 12 V
Tu, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient 125 ''C/W
IRF7752
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage 30 - - V VGS = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coemcient - 0.030 - V/°C Reference to 25°C, ID = 1mA
RDSm Static Drain-to-Source On-Resistance - - O.030 Q l/ss = lov, ID = 4.6A ©
- - 0.036 VGS = 4.5V, ID = 3.9A ©
Vesah) Gate Threshold Voltage 0.60 - 2.0 V Vos = VGS, ID = 250pA
gts Forward Transconductance 12 - - S Vos = 10V, ID = 4.6A
bss Drain-to-Source Leakage Current - - 20 pA Vos = 24V, VGS = 0V o
- - 100 Ws = 24V, VGS = 0V, Tu = 125 C
less Gate-to-Source Forward Leakage - - -200 n A N/ss = -12V
Gate-to-Source Reverse Leakage - - 200 I/ss = 12V
% Total Gate Charge - 9.0 - ID = 4.6A
Qgs Gate-to-Source Charge - 2.5 - nC Vos = 24V
di Gate-to-Drain ("Miller") Charge - 2.6 - VGS = 4.5V©
tum) Turn-On Delay Time - 7.2 - VDD = 15V
tr Rise Time - 9.1 - ns ID = 1.0A
tum) Turn-Off Delay Time - 25 - Rs = 6.0Q
tr Fall Time - 11 - VGs = 10V©
Ciss Input Capacitance - 861 - VGS = 0V
Coss Output Capacitance - 210 - pF Vos = 25V
Crss Reverse Transfer Capacitance - 25 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol Cl
(Body Diode) - _ 0.91 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (O - - 37 p-n junction diode. s
VSD Diode Forward Voltage - - 1.3 V TJ = 25°C, IS = 0.91A, VGs = 0V ©
trr Reverse Recovery Time - 25 - ns To = 25°C, IF = 0.91A
G, Reverse RecoveryCharge - 23 - nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width f 300ps; duty cycle 3 2%.
© When mounted on 1 inch square copper board, t<10 sec
