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IRF7751GTRPBF
-30V Dual P-Channel HEXFET Power MOSFET in a Halogen-Free TSSOP-8 package
International
Tart, Rectifier
PD - 96145A
IIRF7751GPbF
o Ultra Low On-Resistance HEXFET6 Power MOSFET
0 Dual P-Channel MOSFET VDss RDS(on) max ID
0 Very Sm" SOIC Package -30V 35mQ@Vss=-10V -4.5A
q Low. Profile (< 1.2mm) 55m§2@VGs = -4.5V -3.8A
0 Available In Tape & Reel
q Lead-Free
o Halogen-Free
Description
HEXFET8 power MOSFETs from International Rectifier '1 El
utilize advanced processing techniques to achieve ex- [E Z]
tremely low on-resistance per silicon area. This benefit, IE El
combined with the ruggedized device design, that Inter- E El
national Rectifier is well known for, provides the de- 1:01 3:02
signer with an extremely efficient and reliable device 2 -- SI 7 _ S
for use in battery and load management. 3:211 2:222 TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, Ves @ -10V -4.5
ID @ TA = 70°C Continuous Drain Current, Vas @ -10V -3.6 A
IDM Pulsed Drain Current co -18
PD @TA = 25°C Power Dissipation © 1.0 W
PD @TA = 70°C Power Dissipation C3) 0.64
Linear Derating Factor 0.008 W/°C
Ves Gate-to-Source Voltage t20 V
To, TSTG Junction and Storage Temperature Range -55 to +150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 125 °C/W
1
05/14/09
IRF7751GPbF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Vas = 0V, ID = -250pA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.020 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 35 mg Vss = -10V, ID = -4.5A ©
- - 55 V63 = -4.5V, ID = -3.8A ©
l/sam) Gate Threshold Voltage -1.0 - -2.5 V VDs = Vss, ID = -250pA
gfs Forward Transconductance 6.8 - - S VDs = -1OV, ID = -4.5A
. - - -15 V95 = -24V, Vas = ov
I Drain-to-Source Leaka e Current
DSS g - - -25 pA Vos = -24v, Vas = OV, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
GSS Gate-to-Source Reverse Leakage - - 100 Vas = 20V
Qg Total Gate Charge - 29 44 ID = -4.5A
Qgs Gate-to-Source Charge - 5.5 - nC Ihos = -15V
di Gate-to-Drain ("Miller") Charge - 5.0 - l/ss = -10V
td(on) Turn-On Delay Time - 13 20 VDD = -15V
t, Rise Time - 16 24 ns ID = -1.0A
td(off) Turn-Off Delay Time - 155 233 Re = 6.09
tt Fall Time - 80 120 l/ss = -10V©
Ciss Input Capacitance - 1464 - Vas = 0V
Coss Output Capacitance - 227 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 146 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.0 A showing the
[SM Pulsed Source Current 18 integral reverse G
(Body Diode) (D - - - p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.0A, Vss = 0V ©
trr Reverse Recovery Time - 23 35 ns To = 25°C, IF = -1.0A
Qrr Reverse RecoveryCharge - 19 28 nC di/dt = 100A/ps ©
Notes:
CO Repetitive rating; pulse width limited by C3) When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
© Pulse width f 400ps; duty cycle S 2%.
2
