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IRF7751-IRF7751TR
-30V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
:rartRectifier
PD - 94002
IRF7751
HEXFET© Power MOSFET
0 Ultra Low On-Resistance
Voss RDSton) max ID
o Dual P-Channel MOSFET
-30V 35mf2@Vss = -10V -4.5A
0 Very Small SOIC Package
. Low Profile (< 1.2mm) 55mn@Vss - -4.5V -3.8A
0 Available in Tape & Reel
Description
HEXFET® power MOSFETs from International Rectirler iT TI
utilize advanced processing techniques to achieve ex- [E El
tremely low on-resistance per silicon area. This benefit, IE El
combined with the ruggedized device design, that Inter- E El
national Rectifier is well known for, provides the de- 1: DI 3: D2
signer with an extremely efficient and reliable device 2= Sl 7= s2
. 3= Sl 6= $2
for use In battery and load management. 4-- Gl 5= G2 TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain-Source Voltage -30 V
ID @ TC = 25°C Continuous Drain Current, VGS @ -10V -4.5
ID @ Tc = 70°C Continuous Drain Current, VGS @ -10V -3.6 A
IDM Pulsed Drain Current co -18
Po @Tc = 25°C Power Dissipation © 1.0 W
Pro @Tc = 70°C Power Dissipation © 0.64
Linear Derating Factor 0.008 W/°C
Ves Gate-to-Source Voltage :20 V
TJ, TSTG Junction and Storage Temperature Range -55 to +150 "C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 125 ''C/W
1
10/04/2000
IRF7751
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGS = 0V, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.020 - V/°C Reference to 25°C, ID = -1mA
. . . - - 35 VGS = -10V, ID = -4.5A ©
Rroson) Static Drain-to-Source On-Resistance - - 55 mg VGS = -4.5V, ID = -3.8A ©
Vegan) Gate Threshold Voltage -1.0 - -2.5 V Ws = VGs, ID = -250pA
gfs Forward Transconductance 6.8 - - S VDs = -10V, ID = -4.5A
loss Drain-to-Source Leakage Current : : li PA x3: : :2x’ x2: : g, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
Qg Total Gate Charge - 29 44 ID = -4.5A
Qgs Gate-to-Source Charge - 5.5 - nC Vros = -15V
di Gate-to-Drain ("Miller") Charge - 5.0 - VGs = -10V
tam) Turn-On Delay Time - 13 20 VDD = -15V
tr Rise Time - 16 24 ns ID = -1.0A
td(off) Turn-Off Delay Time - 155 233 Re = 6.09
tr Fall Time - 80 120 VGS = -10V©
Ciss Input Capacitance - 1464 - VGS = 0V
Coss Output Capacitance - 227 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 146 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.0 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -18 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.0A, N/ss = 0V ©
trr Reverse Recovery Time - 23 35 ns TJ = 25°C, IF = -1.0A
Qrr Reverse RecoveryCharge - 19 28 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 400ps; duty cycle s: 2%.
© When mounted on 1 inch square copper board, t < 10 sec.
