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IRF7750GTRPBF
-20V Dual P-Channel HEXFET Power MOSFET in a Halogen-Free TSSOP-8 package
International
Tart, Rectifier
PD-96144A
IIRF7750GPbF
HEXFET6 Power MOSFET
q Ultra Low On-Resistance
0 Dual P-Channel MOSFET
q Very Smell SOIC Package Voss = -20V
0 Low Profile ( < 1.1mm)
0 Available in Tape & Reel
o Lead-Free R
= 0.0309
. Halogen-Free DS(on)
Description
HEXFETO power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex- [I El
tremely low on-resistance per silicon area. This benefit, I: El
combined with the ruggedized device design, that Interna- [E El
tional Rectifier is well known for, provides the designer I: El
with an extremely efficient and reliable device for 1 = DI 3 = D2
battery and load management. 2 = Sl 7 = S
3 = SI 6 = S2
The TSSOP-8 package has 45% less footprint area than 4 = Gl 5 = G2 TSSOP-8
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.1mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, Vss @ -4.5V t4.7
ID @ TA = 70°C Continuous Drain Current, Vas @ -4.5V 13.8 A
IDM Pulsed Drain Current co :38
PD @TA = 25°C Power Dissipation 1.0 W
PD @TA = 70°C Power Dissipation 0.64
Linear Derating Factor 0.008 W/°C
Vss Gate-to-Source Voltage i 12 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 125 °C/W
1
05/14/09
IRF7750GPbF International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V Vas = 0V, ID = -250pA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.012 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 0030 g Vss = -4.5V, lo = M.7A ©
- - 0.055 l/cis = -2.5V, ID = -3.8A ©
VGS(1h) Gate Threshold Voltage -O.45 - -1.2 V VDs = Vss, ID = -250pA
gfs Forward Transconductance 11 - - S VDs = -1OV, ID = -4.7A
. - - -1.0 VDs = -20V, Vas = ov
I Drain-to-Source Leaka e Current
DSS g - - -25 pA Vos = -16V, Vas = OV, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
GSS Gate-to-Source Reverse Leakage - - 100 Vas = 12V
Qg Total Gate Charge - 26 39 ID = -4.7A
Qgs Gate-to-Source Charge - 3.9 5.8 nC Ihos = -16V
di Gate-to-Drain ("Miller") Charge - 8.0 12 l/ss = -5.OV©
td(on) Turn-On Delay Time - 15 - VDD = -10V
t, Rise Time - 54 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 180 - RD = lon
tt Fall Time - 210 - Rs = 249 ©
Ciss Input Capacitance - 1700 - Vas = 0V
Coss Output Capacitance - 380 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.0 A showing the
[SM Pulsed Source Current 38 integral reverse G
(Body Diode) (D - - - p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.0A, Vss = 0V ©
trr Reverse Recovery Time - 26 39 ns To = 25°C, IF = -1.0A
Qrr Reverse RecoveryCharge - 16 24 nC di/dt = 100A/ps ©
Notes:
CO Repetitive rating; pulse width limited by C3) When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
© Pulse width f 300ps; duty cycle S 2%.
2
