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IRF7750-IRF7750TR
-20V Dual P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
:rartRectifier
Description
Ultra Low On-Resistance
Dual P-Channel MOSFET
Very Small SOIC Package
Low Profile ( < 1.1mm)
Available in Tape & Reel
HEXFET©
PD - 93848A
IRF7750
Power MOSFET
RDS(on) = 0.030n
VDSS = -20V
HEXFET® power MOSFETs from International Rectifier utilize advanced processing techniques to achieve extremely
low on-resistance per silicon area. This benefit, combined with the ruggedized device design, that International Rectifier
is well known for, provides the designer with an extremely efficient and reliable device for battery and load
management.
The TSSOP-8 package has 45% less footprint area than the standard SO-8. This makes the TSSOP-8 an ideal device
for applications where printed circuit board space is at a premium. The low profile (<1.1mm) allows it to fit easily into
extremely thin environments such as portable electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -20 V
ID @ TC = 25°C Continuous Drain Current, VGS @ -4.5V 14.7
ID @ Tc = 70°C Continuous Drain Current, VGS @ -4.5V i3.8 A
IDM Pulsed Drain Current co t38
Po @Tc = 25°C Power Dissipation 1.0 W
Pro @Tc = 70°C Power Dissipation 0.64
Linear Derating Factor 0.008 W/°C
Ves Gate-to-Source Voltage * 12 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient) 125 ''C/W
1
5/25/2000
IRF7750 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250PA
AV(BR,DSSIATJ Breakdown Voltage Temp. Coemcient - 0.012 - V/°C Reference to 25°C, ID = -1mA
Rroson) Static Drain-to-Source On-Resistance - - 0.030 Q VGS = -4.5V, lo = -4.7A ©
- - 0.055 VGs = -2.5V, ID = -3.8A ©
Vegan) Gate Threshold Voltage -0.45 - -1.2 V Vros = VGs, ID = -250pA
gfs Forward Transconductance 11 - - S Vos = -10V, ID = -4.7A
. - - -1.0 Ws = -20V, VGS = OV
I Drain-to-Source Leaka e Current
DSS g - - -25 PA l/DS = -16V, VGS = OV, T J = 70°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -12V
GSS Gate-to-Source Reverse Leakage - - 100 VGS = 12V
09 Total Gate Charge - 26 39 ID = -4.7A
Qgs Gate-to-Source Charge - 3.9 5.8 nC Vros = -16V
di Gate-to-Drain ("Miller") Charge - 8.0 12 Vss = -5.01/©
tam) Turn-On Delay Time - 15 - VDD = -10V
tr Rise Time - 54 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 180 - Ro = lon
tr Fall Time - 210 - Rs = 249 ©
Ciss Input Capacitance - 1700 - VGS = 0V
Coss Output Capacitance - 380 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 1 0 MOSFET symbol D
(Body Diode) - - - . showing the
ISM Pulsed Source Current 38 integral reverse G
(Body Diode) C) - - - p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.0A, N/ss = 0V ©
trr Reverse Recovery Time - 26 39 ns TJ = 25°C, IF = -1.0A
Qrr Reverse RecoveryCharge - 16 24 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board, t<10 sec
max. junction temperature.
© Pulse width S 300ps; duty cycle s: 2%.
2
