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IRF7726-IRF7726TR
-30V Single P-Channel HEXFET Power MOSFET in a Micro 8 package
PD -94064
International
TOR Rectifier IRF7726
HEXFET© Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET VDss RDS(on) max In
Very Small SOIC Package -30V 0.026@VGs = -10V -7-0A
Low Profile (< 1.2mm) 0.040@Vss = -4.5V -6.0A
Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Recti-
fer utilize advanced processing techniques to achieve
extremely low on-resistance per silicon area. This
beneht, combined with the ruggedized device design,
that International Rectifier is well known for, provides
the designer with an extremely efficient and reliable
device for battery and load management. In, D
The new Micr08 package, with half the footprint area Top View MICRO-8
of the standard SO-8, provides the smallest footprint
available in an SOIC outline. This makes the Micr08
an ideal device for applications where printed circuit
board space is at a premium. The Iowprofile (<1 .2mm)
ofthe Micr08 will allow it to fd easily into extremely thin
application environments such as portable electronics
and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -30 V
In @ TA = 25°C Continuous Drain Current, VGs @ -10V -7.0
In @ TA = 70°C Continuous Drain Current, VGS @ -10V -5.7 A
IDM Pulsed Drain CurrentCD -28
Pro @TA = 25°C Maximum Power Dissipation© 1.79 W
PD @TA = 70°C Maximum Power Dissipation© 1.14 W
Linear Derating Factor 0.01 W/°C
VGs Gate-to-Source Voltage t20 V
T J , TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Parameter Max. Units
ReJA Maximum Junction-to-Ambient® 70 "C/W
1
12/21/00
IRF7726 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.016 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - - O.026 Q VGS = -10V, ID = -7.0A ©
- - 0.040 VGS = -4.5V, ID = -6.OA ©
VGS(th) Gate Threshold Voltage -1.0 - -2.5 V Vos = VGS, ID = -250pA
gfs Forward Transconductance 10 - - S Vos = -10V, ID = -7.0A
loss Drain-to-Source Leakage Current - - -15 pA N/ns = -24V, VGS = 0V
- - -25 V93 = -24V, Vss = 0V, Tu = 70°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
GSS Gate-to-Source Reverse Leakage - - 100 VGs = 20V
% Total Gate Charge - 46 69 ID = -7.0A
Qgs Gate-to-Source Charge - 8.0 - nC Vros = -151/
di Gate-to-Drain ("Miller") Charge - 8.1 - VGS = -10V
tdon) Turn-On Delay Time - 15 23 VDD = -15V, VGS = -10V
tr Rise Time - 25 38 ns ID = -1.0A
td(off) Turn-Off Delay Time - 227 341 Rs = 6.09
tf Fall Time - 107 161 RD = 159 ©
Ciss Input Capacitance - 2204 - VGS = OV
Coss Output Capacitance - 341 - pF VDS = -25V
Crss Reverse Transfer Capacitance - 220 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current 1 8 MOSFET symbol D
(Body Diode) - - - . showing the
ISM Pulsed Source Current 28 A integral reverse G
(Body Diode) OD - - - p-n junction diode. s
Vso Diode FonNard Voltage - - -1.2 V To = 25°C, Is = -1.8A, Vss = 0V ©
trr Reverse Recovery Time - 35 53 ns To = 25''C, IF = -1.8A
Qrr Reverse Recovery Charge - 32 48 wc di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board, t < 10 sec.
max. junction temperature.
© Pulse width I 400ps; duty cycle 3 2%.
2
