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IRF7707TRPBF
-20V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD-96024A
International
TOR Rectifier llRF7707PbF
HEXFET6 Power MOSFET
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Lead-Free
Voss RDS(on) max ID
-2ov 22ms2@sz = -4.5v -7.0A
33m§2@VGS = -2.5V -6.0A
Description
HEXFETO Power MOSFETs from International Rectifier II D El
utilize advanced processing techniques to achieve ex- ' El
tremely low on-resistance per silicon area. This benefit, I: G El
combined with the ruggedized device design, that Inter- '2 s El
national Rectifier is well known for, providesthedesigner I = [D 8 = D
with an extremely efficient and reliable device for 2 -- s 7 -- s
battery and load management. 2:: 2:3 TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -20 V
In @ TA = 25°C Continuous Drain Current, Vas @ -4.5V -7.0
In @ TA = 70°C Continuous Drain Current, Vas @ -4.5V -5.7 A
IDM Pulsed Drain Currenk0 -28
PD @TA = 25°C Maximum Power Dissipation© 1.5 W
PD @TA = 70°C Maximum Power Dissipation© 1.0 W
Linear Derating Factor 0.01 W/°C
Vas Gate-to-Source Voltage :12 V
TJ , Tsms Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient 83 °C/W
1
05/14/09
IRF7707PbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 -- -- V VGs = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.012 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - 14.3 22 m9 VGS = -4.5V, ID = -7.OA ©
- 18.9 33 l/ss = -2.5V, ID = -6.0A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V Vos = Vas, ID = -250PA
gfs Forward Transconductance 15 - - S Vos = -10V, ID = -7.0A
loss Drain-to-Source Leakage Current - - -1.0 pA l/rss = -16V, Vss = 0V
- - -25 V93 = -16V, l/ss = 0V, Tu = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -12V
Gate-to-Source Reverse Leakage - - 100 Vas = 12V
Qg Total Gate Charge - 31 47 ID = -7.0A
QgS Gate-to-Source Charge - 6.4 - nC I/cs = -16V
di Gate-to-Drain ("Miller") Charge - 10 - l/ss = -4.5V
tdmn) Turn-On Delay Time - 11 17 VDD = -10V
t, Rise Time - 54 81 ns ID = -1.0A
1d(off) Turn-Off Delay Time - 134 201 Rs = 6.0Q
tf Fall Time - 138 207 Vas = -4.5V ©
Ciss Input Capacitance - 2361 - Vas = 0V
Coss Output Capacitance - 512 - pF Vos = -15V
Crss Reverse Transfer Capacitance - 323 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -28 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -1.5A, VGS = 0V ©
trr Reverse Recovery Time - 142 213 ns To = 25°C, IF = -1.5A
er Reverse Recovery Charge - 147 221 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle S 2%.
(3 When mounted on 1 inch square copper board, t < 10sec.
