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IRF7707-IRF7707TR
-20V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD -93996
International
TOR Rectifier IRF7707
HEXFET© Power MOSFET
Voss RDS(on) max ID
-20V 22mn@Vss = -4.5V -7.0A
33mn@Vss = -2.5v -6.0A
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides thedesigner
with an extremely efficient and reliable device for
battery and load management.
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The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to ft
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain-Source Voltage -20 V
ID @ TA = 25°C Continuous Drain Current, VGs @ -4.5V -7.0
ID @ TA = 70°C Continuous Drain Current, VGS @ -4.5V -5.7 A
los, Pulsed Drain CurrentCD -28
Pro @TA = 25°C Maximum Power Dissipation® 1.5 W
PD @TA = 70°C Maximum Power Dissipation® 1.0 W
Linear Derating Factor 0.01 W/°C
VGs Gate-to-Source Voltage 112 V
T J , TSTG Junction and Storage Temperature Range -55 to +150 ''C
Thermal Resistance
Parameter Max. Units
RNA Maximum Junction-to-Ambient© 83 °C/W
1
10/04/00
IRF7707
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -20 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.012 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance - 14.3 22 mn VGS = M.5V, ID = -7.0A ©
- 18.9 33 l/ss = -2.5V, ID = -6.0A ©
VGS(th) Gate Threshold Voltage -0.45 - -1.2 V N/ns = VGs, ID = -250pA
gis Forward Transconductance 15 - - S Vos = -1OV, ID = -7.0A
loss Drain-to-Source Leakage Current - - -1.0 PA Vos = -16V, VGS = 0V o
- - -25 Vos = -16V, VGS = 0V, TJ = 70 C
less Gate-to-Source Forward Leakage - - -100 n A N/ss = -12V
Gate-to-Source Reverse Leakage - - 100 VGS = 12V
% Total Gate Charge - 31 47 ID = -7.0A
Qgs Gate-to-Source Charge - 6.4 - nC Vros = -16V
di Gate-to-Drain ("Miller") Charge - IO - Vss = -4.5V
tdwn) Turn-On Delay Time - 11 17 VDD = -10V
t, Rise Time - 54 81 ns lo = -1.0A
td(off) Turn-Off Delay Time - 134 201 Rs = 6.09
tr Fall Time - 138 207 VGs = -4.5V ©
Ciss Input Capacitance - 2361 - VGS = 0V
CDSS Output Capacitance - 512 - pF Vros = -15V
Crss Reverse Transfer Capacitance - 323 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -28 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V Tu = 25°C, IS = -1.5A, l/cs = 0V ©
trr Reverse Recovery Time - 142 213 ns Tu = 25''C, IF = -1.5A
Qrr Reverse Recovery Charge - 147 221 nC di/dt = -100/Ups ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width s: 300ps; duty cycle f 2%.
© When mounted on 1 inch square copper board, t < 10sec.
