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IRF7706GTRPBF
-30V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
TOR Rectifier
PD-96143A
IIRF7706GPbF
HEXFET6 Power MOSFET
0 Ultra Low On-Resistance
0 Very Smell SOIC Package -30V 22mQ@VGs = -10V -7.0A
. Low. Profile (< 1.2mm) 36mQ@1/ss = -4.5V -5.6A
0 Available In Tape & Reel
q Lead-Free
o Halogen-Free
Description
HEXFETO Power MOSFETs from International Rectifier II D El
utilize advanced processing techniques to achieve ex- ' El
tremely low on-resistance per silicon area. This benefit, I: G El
combined with the ruggedized device design, that Inter- '2 s El
national Rectifier is well known for, provides the de- I :D 3:0
signer with an extremely efficient and reliable device 2 -- s 7 -- s
3 = S 6 = S
for battery and load management. 4 -- G 5 -- D TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain-Source Voltage -30 V
In @ TA = 25°C Continuous Drain Current, Vas @ -10V -7.0
In @ TA = 70°C Continuous Drain Current, Vas @ -10V -5.7 A
IDM Pulsed Drain Currenk0 -28
PD @TA = 25°C Maximum Power Dissipation© 1.51 W
PD @TA = 70°C Maximum Power Dissipation© 0.96 W
Linear Derating Factor 0.01 W/°C
Vas Gate-to-Source Voltage t 20 V
TJ , Tsms Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient 83 °C/W
1
05/15/09
IRF7706GPbF
International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 -- -- V VGs = 0V, ID = -250pA
AV(BR,Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.015 - V/°C Reference to 25°C, ID = -1mA
RDS(on) Static Drain-to-Source On-Resistance T, _- 3: m9 x: : lenIFD:-7506AA%
VGS(th) Gate Threshold Voltage -1.0 - -2.5 V Vos = VGS, ID = -250PA
gfs Forward Transconductance 6.9 - - S Vos = -10V, ID = -7.0A
loss Drain-to-Source Leakage Current - - -15 pA l/rss = -24V, Vss = 0V
- - -25 V93 = -24V, l/ss = 0V, Tu = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -20V
Gate-to-Source Reverse Leakage - - 100 Vas = 20V
Qg Total Gate Charge - 48 72 ID = -7.0A
QgS Gate-to-Source Charge - 8.5 - nC I/cs = -15V
di Gate-to-Drain ("Miller") Charge - 8.4 - l/ss = -10V
tdmn) Turn-On Delay Time - 17 25 VDD = -15V, VGS = -10V
t, Rise Time - 46 69 ns ID = -1.0A
1d(off) Turn-Off Delay Time - 244 366 Rs = 6.0Q
tf Fall Time - 122 183 RD = 159 C)
Ciss Input Capacitance - 2211 - Vas = 0V
Coss Output Capacitance - 339 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 207 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -28 p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V Tu = 25°C, Is = -1.5A, VGS = 0V ©
trr Reverse Recovery Time - 34 51 ns To = 25°C, IF = -1.5A
er Reverse Recovery Charge - 32 48 nC di/dt = -100A/ps ©
Notes:
co Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width S 300ps; duty cycle S 2%.
(3 When mounted on 1 inch square copper board, t < 10sec.
