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IRF7706
-30V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
TOR Rectifier
Ultra Low On-Resistance
P-Channel MOSFET
Very Small SOIC Package
Low Profile (< 1.2mm)
Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
national Rectifier is well known for, provides the de-
signer with an extremely ethcient and reliable device
for battery and load management.
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to ft
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
PD -94003
IRF7706
HEXFET© Power MOSFET
Voss RDS(on) max ID
-30V 22mQ@VGs = -10V -7.0A
36mn@Vss = -4.5V -5.6A
Izllzllillzl
n n H II
Parameter
VDs Drain-Source Voltage
ID @ TA = 25°C Continuous Drain Current, VGs @ -10V
ID @ TA = 70°C Continuous Drain Current, VGs @ -10V
los, Pulsed Drain CurrentCD
Pro @TA = 25°C Maximum Power Dissipation®
PD @TA = 70°C Maximum Power Dissipation®
Linear Derating Factor
VGs Gate-to-Source Voltage
TJ , TSTG
Junction and Storage Temperature Range
-55 to + 150
Thermal Resistance
Parameter
RNA Maximum Junction-to-Ambient©
1 0/04/00
IRF7706 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGS = 0V, ID = -250pA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.015 - V/°C Reference to 25°C, ID = -1mA
Rosom Static Drain-to-Source On-Resistance : _- :2 mn (e: : 10;},IFD==-75%:%
VGS(th) Gate Threshold Voltage -1.0 - -2.5 V l/ns = VGs, ID = -250pA
gis Forward Transconductance 6.9 - - S Vos = -1OV, ID = -7.0A
loss Drain-to-Source Leakage Current - - -15 PA Vos = -24V, VGS = 0V o
- - -25 Vos = -24V, VGS = 0V, TJ = 70 C
less Gate-to-Source Forward Leakage - - -100 n A N/ss = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 48 72 ID = -7.0A
Qgs Gate-to-Source Charge - 8.5 - nC Vros = -15V
di Gate-to-Drain ("Miller") Charge - 8.4 - Vss = -10V
tdwn) Turn-On Delay Time - 17 25 VDD = -15V, VGS = -10V
tr Rise Time - 46 69 ns lo = -1.0A
td(off) Turn-Off Delay Time - 244 366 Rs = 6.09
tr Fall Time - 122 183 R9 = 159 ©
Ciss Input Capacitance - 2211 - VGS = 0V
CDSS Output Capacitance - 339 - pF Vros = -25V
Crss Reverse Transfer Capacitance - 207 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
ls Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) C) - - -28 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V Tu = 25°C, IS = -1.5A, l/cs = 0V ©
trr Reverse Recovery Time - 34 51 ns Tu = 25''C, IF = -1.5A
Qrr Reverse Recovery Charge - 32 48 nC di/dt = -100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by © When mounted on 1 inch square copper board, t < 10sec.
max. junction temperature.
© Pulse width s: 300ps; duty cycle f 2%.
2
