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IRF7705TRPBF
-30V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
:rartRectifier
Ultra Low On-Resistance
o P-Channel MOSFET
q Very Small SOIC Package
0 Low Profile ( < 1.2mm)
0 Available in Tape & Reel
o Lead-Free
Description
HEXFET8 power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
PD-96022A
llRF7705PbF
HEXFET6 Power MOSFET
VDss RDS(on) max (mf2) ID
-30V 18 ©Vss = -10V -8.0A
30 @1/ss = -4.5V -6.0A
II D El
l: G El
I: s El
national Rectifier is well known for, provides the de- 1 --D s D
signer with an extremely efficient and reliable device 3:: 2::
for use in battery and load management. 4 -- e 5 D TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vos Drain- Source Voltage -30 V
ID @ TA = 25°C Continuous Drain Current, l/ss © -10V -8.0
ID @ TA = 70°C Continuous Drain Current, Vas @ -10V -6.0 A
IDM Pulsed Drain Current (D -30
PD @TA = 25°C Power Dissipation © 1.5 W
PD OTA-- 70°C Power Dissipation © 0.96
Linear Derating Factor 0.012 W/°C
Ves Gate-to-Source Voltage i 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 83 °C/W
1
05/15/09
IRF7705PbF
International
TOR Rectifier
Electrical Characteristics © To = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V Vas = 0V, ID = -250pA
AV(BR,DSS/ATJ Breakdown Voltage Temp. Coefficient - 0.015 - V/°C Reference to 25°C, ID = -1mA
Roam) Static Drain-to-Source On-Resistance - - 18 mg Vss = -10V, ID = -8.0A ©
- - 30 V63 = -4.5V, ID = -6.0A ©
l/sam) Gate Threshold Voltage -1.0 - -2.5 V VDs = Vss, ID = -250pA
gfs Forward Transconductance 13 - - S VDs = -1OV, ID = -8.0A
loss Drain-to-Source Leakage Current _- _- Ci,' pA :3: : C,11' t: : g, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 Vas = 20V
Qg Total Gate Charge - 58 88 ID = -8.0A
Qgs Gate-to-Source Charge - 10 - nC Ihos = -15V
di Gate-to-Drain ("Miller") Charge - 9.0 - l/ss = -10V©
td(on) Turn-On Delay Time - 18 27 VDD = -15V, Vas = -10V©
t, Rise Time - 35 53 ns ID = -1.0A
td(off) Turn-Off Delay Time - 270 405 RD = 159
tt Fall Time - 128 190 Rs = 6.09 ©
Ciss Input Capacitance - 2774 - Vas = 0V
Coss Output Capacitance - 418 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
[SM Pulsed Source Current - - -30 A integral reverse G
(Body Diode) (D p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.5A, Vss = 0V ©
trr Reverse Recovery Time - 36 54 ns To = 25°C, IF = -1.5A
Qrr Reverse RecoveryCharge - 34 50 nC di/dt = 100A/ps ©
Notes:
CO Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width f 400ps; duty cycle S 2%.
C3) When mounted on 1 inch square copper board, t<10 sec
