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IRF7705
-30V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD - 94001A
International
Tart, Rectifier IRF7705
HEXFET© Power MOSFET
. Ultra Low On-Resistance Voss RDS max (m9) ID
. P-Channel MOSFET -30V 'it), - -10V -8 0A
o Very Small SOIC Package GS: .
. Low Profile ( < 1.2mm) 30 @VGS - -4.5V -6.OA
0 Available in Tape & Reel
Description
HEXFET® power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit,
combined with the ruggedized device design, that Inter-
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national Rectifier is well known for, provides the de- 1: D s: D
signer with an extremely efficient and reliable device it g 2: i
for use In battery and load management. 4-- G 5: L) TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -30 V
ID @ To = 25°C Continuous Drain Current, VGS @ -10V -8.0
ID @ To = 70°C Continuous Drain Current, VGS @ -10V -6.0 A
IDM Pulsed Drain Current co -30
Po @Tc = 25°C Power Dissipation © 1.5 W
Pro @Tc = 70°C Power Dissipation s 0.96
Linear Derating Factor 0.012 W/°C
Ves Gate-to-Source Voltage * 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 83 ''C/W
1
06l05/01
IRF7705
International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -30 - - V VGs = 0V, ID = -250PA
AV(BR)DSSIATJ Breakdown Voltage Temp. Coemcient - 0.015 - Vl°C Reference to 25°C, ID = -1mA
. . . - - 18 VGS = -10V, lo = -8.0A ©
RDS(on) Static Drain-to-Source On-Resistance - - 30 mg VGs = -4.5V, ID = -6.0A ©
Vegan) Gate Threshold Voltage -1.0 - -2.5 V Ws = VGs, ID = -250pA
gfs Forward Transconductance 13 - - S VDs = -10V, ID = -8.0A
loss Drain-to-Source Leakage Current : : li PA V3: : 22$ V: : g, To = 70°C
less Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
09 Total Gate Charge - 58 88 ID = -8.0A
Qgs Gate-to-Source Charge - 10 - nC Ws = -15V
di Gate-to-Drain ("Miller") Charge - 9.0 - Vss = -10V©
tam) Turn-On Delay Time - 18 27 VDD = -15V, VGS = -10V©
tr Rise Time - 35 53 ns ID = -1.0A
td(off) Turn-Off Delay Time - 270 405 RD = 159
tr Fall Time - 128 190 Rs = 6.09 ©
Ciss Input Capacitance - 2774 - l/ss = 0V
Coss Output Capacitance - 418 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 270 - f = 1.0MHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 showing the
ISM Pulsed Source Current A integral reverse G
(Body Diode) (D - - -30 p-n junction diode. s
Vso Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.5A, N/ss = 0V ©
trr Reverse Recovery Time - 36 54 ns TJ = 25°C, IF = -1.5A
Qrr Reverse RecoveryCharge - 34 50 nC di/dt = 100A/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width s: 400ps; duty cycle S 2%.
© When mounted on 1 inch square copper board, t<1O sec
