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IRF7704TRPBF
-40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
:raRlectifier
PD- 96025A
IIRF7704PbF
H EXFET® Power MOSFET
o Itr Low n-R itn
U a o 0 es s a ce Voss RDS(on) max (mg) ID
q P-Channel MOSFET
-40V 46@Vss = -10V -4.6A
q Very Small SOIC Package 74@V _ 4 5V 3 7A
. Low Profile (< 1.1mm) GS - . .
q Available in Tape & Reel
0 Lead-Free
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit, [I D E]
combined with the ruggedized device design, that Inter- I: ZI
national Rectifier is well known for, provides thedesigner I: G E
with an extremely efficient and reliable device for II s El
battery and load management. 1 = D 8 D
2:5 7--8
The TSSOP-8 package has 45% less footprint area than 3 = S 6 = S
the standard SO-8. This makes the TSSOP-8 an ideal 4 :G 5 D TSSOP-8
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -40 V
In @ TA = 25°C Continuous Drain Current, Ves @ -10V -4.6
ID @ TA-- 70°C Continuous Drain Current, VGS @ -10V -3.7 A
IDM Pulsed Drain Current Ci) -19
PD @TA = 25°C Power Dissipation G) 1.5 W
PD @TA = 70°C Power Dissipation G) 1.0
Linear Derating Factor 12 mW/°C
Ves Gate-to-Source Voltage * 20 V
TJ,TSTS Junction and Storage Temperature Range -55 to + 150 "C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 83 oc/IN
1
05/15/09
IRF7704PbF
International
TOR Rectifier
Electrical Characteristics @ Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 -- -- V Vss = 0V, ID = -250pA
AV(BR,DSSIATJ Breakdown Voltage Temp. Coefficient - 0.03 - V/°C Reference to 25°C, ID = -1mA
. . . - - 46 Vas = -10V, '0 = -4.6A ©
RDS(on) Static Drain to Source On Resistance _ - 74 mn VGS = -4.5V, ID = -3.7A ©
VGS(th) Gate Threshold Voltage -1.0 - -3.0 V VDS = Vas, ID = -250pA
ge, Forward Transconductance 7.2 - - S Vos = -10V, ID = -4.6A
loss Drain-to-Source Leakage Current : : -25) pA x3: : Cg,' x: : 3:: Tu = 70°C
less Gate-to-Source Forward Leakage - - -100 n A Vss = -20V
Gate-to-Source Reverse Leakage - - 100 VGS = 20V
% Total Gate Charge - 25 38 ID = -4.6A
Qgs Gate-to-Source Charge - IO 15 nC Vos = -15V
di Gate-to-Drain ("Miller") Charge - 9.5 14 Vas = -4.5V
tum) Turn-On Delay Time - 25 - N/oo = -20V ©
tr Rise Time - 360 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 190 - Rs = 6.09.
tf Fall Time -- 100 -.-.- l/ss = -4.5V
Ciss Input Capacitance - 3150 - l/ss = 0V
Coss Output Capacitance - 250 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 200 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current MOSFET symbol D
(Body Diode) - - -1.5 A showing the
ISM Pulsed Source Current - - -1 9 integral reverse G
(Body Diode) OD p-n junction diode. S
l/so Diode Forward Voltage - - -1.2 V TJ = 25°C, Is = -1.5A, Vss = 0V ©
trr Reverse Recovery Time - 29 44 ns TJ = 25°C, IF = -1.5A
a,, Reverse Recovery Charge - 41 62 nC di/dt = -1OOA/ps ©
Notes:
C) Repetitive rating; pulse width limited by
max. junction temperature.
© Pulse width 5 400ps; duty cycle s: 2%.
© Surface mounted on 1 in square Cu board
