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IRF7704
-40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
International
:raRlectifier
PD- 94160
IRF7704
HEXFET® Power MOSFET
Ultra Low On Resistance VDss RDS(on) max (mn) ID
o P-Channel MOSFET -40V 46@VGs = -10V -4 6A
0 Very Small SOIC Package 74@V - 4 5V 3 7A
. Low Profile (< 1.1mm) GS . .
o Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier
utilize advanced processing techniques to achieve ex-
tremely low on-resistance per silicon area. This benefit, [I D Ts]
combined with the ruggedized device design, that Inter- I: ZI
national Rectifier is well known for, provides thedesigner [Z G YE]
with an extremely ethcient and reliable device for IE s El
battery and load management. l-- L) 8-- L)
2= s 7= s
The TSSOP-8 package has 45% less footprint area than 3 = S 6= S
the standard SO-8. This makes the TSSOP-8 an ideal 4= G 5-- D TSSOP-8
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
Vros Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, VGS @ -10V -4.6
ID @ TA-- 70°C Continuous Drain Current, VGS @ -10V -3.7 A
IDM Pulsed Drain Current co -19
Po @TA = 25°C Power Dissipation © 1.5 W
Pro @TA = 70°C Power Dissipation © 1.0
Linear Derating Factor 12 mW/“C
VGS Gate-to-Source Voltage i 20 V
TJ, TSTG Junction and Storage Temperature Range -55 to + 150 °C
Thermal Resistance
Parameter Max. Units
' Maximum Junction-to-Ambient® 83 °CNV
3/19/01
IRF7704 International
TOR Rectifier
Electrical Characteristics @ T J = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 - - V VGS = 0V, ID = -250pA
AV(BR,DSSIATJ Breakdown Voltage Temp. Coemcient - 0.03 - V/°C Reference to 25°C, ID = -1mA
. . . - - 46 V33 = -10V, ID = -4.6A ©
R Static Drain-to-Source On-Resistance
DS(on) - - 74 mn Vss = -4.5v, ID = -3.7A ©
VGS(th) Gate Threshold Voltage -1.0 - -3.0 V Vros = VGs, ID = -250PA
Ts Forward Transconductance 7.2 - - S Vos = -10V, ID = -4.6A
. - - -10 Vos = -32V, VGS = 0V
I Drain-to-Source Leaka e Current
DSS g - - -25 pA Vros = -32V, Vss = OV, T: = 70°C
I Gate-to-Source Forward Leakage - - -100 n A VGS = -20V
GSS Gate-to-Source Reverse Leakage - - 100 Vss = 20V
09 Total Gate Charge - 25 38 ID = -4.6A
Qgs Gate-to-Source Charge - IO 15 nC Vos = -15V
di Gate-to-Drain ("Miller") Charge - 9.5 14 l/cs = -4.5V
tdmn) Turn-On Delay Time - 25 - VOD = -20V ©
tr Rise Time - 360 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 190 - Rs = 6.09
" Fall Time - 100 - VGS = -4.5V
Ciss Input Capacitance - 3150 - Vss = 0V
Cass Output Capacitance - 250 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 200 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 1 5 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current - 19 integral reverse e
(Body Diode) C) - - p-n junction diode. S
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.5A, VGS = 0V ©
trr Reverse Recovery Time - 29 44 ns To = 25°C, IF = -1.5A
Qrr Reverse Recovery Charge - 41 62 nC di/dt = -100/Vps ©
Notes:
co Repetitive rating; pulse width limited by CD Surface mounted on 1 in square Cu board
max. junction temperature.
C) Pulse width I 400ps; duty cycle 5 2%.
2
