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ISL4221EIR ,QFN Packaged/ +/-15kV ESD Protected/ +2.7V to +5.5V/ 150Nanoamp/ 250kBps/ RS-232 Transmitters/ReceiversFeatures+2.7V to +5.5V, 150Nanoamp, 250kBps, • Available in Near Chip Scale QFN (5mmx5mm) Package R ..
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IRF7703
-40V Single P-Channel HEXFET Power MOSFET in a TSSOP-8 package
PD - 94221 B
International
TOR Rectifier llRF7703
HEXFET© Power MOSFET
. Ultra Low On-Resistance V R max mg l
o P-Channel MOSFET Ct','' T/i), Ct', ) 63A
. Very Small SOIC Package 45@VGS_ 4 5V 4'8A
. Low Profile (< 1.2mm) Gs" . - .
Available in Tape & Reel
Description
HEXFET® Power MOSFETs from International Rectifier (rr :
utilize advanced processing techniques to achieve ex- . (Y: --1
tremely low on-resistance per silicon area. This benefit, --- Cl
combined with the ruggedized device design, that Inter- CC]
national Rectifier is well known for, provides the de-
signer with an extremely efficient and reliable device
for battery and load management. I . . TSSOP-8
The TSSOP-8 package has 45% less footprint area than
the standard SO-8. This makes the TSSOP-8 an ideal
device for applications where printed circuit board space
is at a premium. The low profile (<1.2mm) allows it to fit
easily into extremely thin environments such as portable
electronics and PCMCIA cards.
Absolute Maximum Ratings
Parameter Max. Units
VDs Drain- Source Voltage -40 V
ID @ TA = 25°C Continuous Drain Current, I/ss @ -10V -6.0
ID @ TA-- 70°C Continuous Drain Current, Ves @ -10V -4.7 A
IDM Pulsed Drain Current (D -24
PD @TA = 25°C Power Dissipation © 1.5 W
Po @TA = 70°C Power Dissipation (3 0.96
Linear Derating Factor 0.012 W/°C
Vss Gate-to-Source Voltage i 20 V
To, TSTG Junction and Storage Temperature Range -55 to + 150 ''C
Thermal Resistance
Parameter Max. Units
RQJA Maximum Junction-to-Ambient® 83 °C/W
1
04/22/05
IRF7703 International
TOR Rectifier
Electrical Characteristics © Tu = 25°C (unless otherwise specified)
Parameter Min. Typ. Max. Units Conditions
V(BR)DSS Drain-to-Source Breakdown Voltage -40 - - V Vas = 0V, ID = -250pA
AV(BR)Dss/ATJ Breakdown Voltage Temp. Coefficient - 0.030 - V/°C Reference to 25°C, ID = -1mA
. . . - - 28 Vas = -10V, ID = -6.0A ©
R Static Drain-to-Source On-Resistance
DS(on) - - 45 mn VGS = -4.5v, ID = -4.8A ©
Vesah) Gate Threshold Voltage -1.0 - -3.0 V Vos = VGS, ID = -250pA
gfs Forward Transconductance IO - - S Vos = -10V, ID = -6.0A
loss Drain-to-Source Leakage Current - - -1 5 PA 1hos = -32V, VGS = 0V
- - -25 Ihos = -32V, l/ss = 0V, To = 70°C
I Gate-to-Source Forward Leakage - - -100 n A l/ss = -20V
GSS Gate-to-Source Reverse Leakage - - 100 Vas = 20V
09 Total Gate Charge - 41 62 ID = -6.0A
Qgs Gate-to-Source Charge - 16 25 nC VDs = -20V
di Gate-to-Drain ("Miller") Charge - 16 24 Vas = -4.5V
tdmn) Turn-On Delay Time - 43 - VDD = -20V ©
tr Rise Time - 405 - ns ID = -1.0A
td(off) Turn-Off Delay Time - 155 - Re = 6.09
if Fall Time - 77 - Vas = -10V
Ciss Input Capacitance - 5220 - Vas = 0V
COSS Output Capacitance - 416 - pF Vos = -25V
Crss Reverse Transfer Capacitance - 337 - f = 1.0kHz
Source-Drain Ratings and Characteristics
Parameter Min. Typ. Max. Units Conditions
Is Continuous Source Current 1 5 MOSFET symbol D
(Body Diode) - - - . A showing the
ISM Pulsed Source Current 24 integral reverse G
(Body Diode) (D - - p-n junction diode. s
VSD Diode Forward Voltage - - -1.2 V To = 25°C, Is = -1.5A, VGS = 0V ©
tn Reverse Recovery Time - 34 51 ns To = 25°C, IF = -1.5A
Qrr Reverse Recovery Charge - 56 84 nC di/dt = -100A/us ©
Notes:
C) Repetitive rating; pulse width limited by (3) Surface mounted on 1 in square Cu board
max. junction temperature.
© Pulse width S 400ps; duty cycle S 2%.
2
